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Thin film transistors
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B
Bahubalindrun P a
,
Tavares V b
,
Barquinha P a
,
De Oliveira PG b
,
Martins R a
,
Fortunato E a
. 2016.
InGaZnO TFT behavioral model for IC design
.
Analog Integrated Circuits and Signal Processing. 87:73-80.
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Bahubalindruni PG a
,
Kiazadeh A b
,
Sacchetti A b
,
Martins J b
,
Rovisco A b
,
Tavares VG c
,
Martins R b
,
Fortunato E b
,
Barquinha P b
. 2016.
Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance
.
Journal of Display Technology. 12:515-518.
Abstract
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Bahubalindruni PG a
,
Tavares V c
,
Barquinha P b
,
Martins R b
,
Fortunato E b
. 2016.
Basic analog and digital circuits with a-IGZO TFTs
.
2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016.
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Bahubalindruni PG a
,
Tavares VG b
,
Borme J c
,
De Oliveira PG b
,
Martins R a
,
Fortunato E a
,
Barquinha P a
. 2016.
InGaZnO thin-film-transistor-based four-quadrant high-gain analog multiplier on glass
.
IEEE Electron Device Letters. 37:419-421.
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c Bahubalindruni PG a
,
Tavares VG b
,
Fortunato E a
,
Martins R a
,
Barquinha P a
. 2016.
Novel linear analog-adder using a-IGZO TFTs
.
Proceedings - IEEE International Symposium on Circuits and Systems. 2016-July:2098-2101.
Abstract
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C
Carlos E
,
Branquinho R
,
Kiazadeh A
,
Barquinha P
,
Martins R
,
Fortunato E
. 2016.
UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors
.
ACS Applied Materials and Interfaces. 8:31100-31108.
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Correia A a
,
Goes J a
,
Barquinha P b
. 2016.
Oxide TFTs on flexible substrates for designing and fabricating analog-to-digital converters
.
IFIP Advances in Information and Communication Technology. 470:533-541.
Abstract
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D
b Deuermeier J a
,
Wardenga HF b
,
Morasch J b
,
c Siol S b
,
Nandy S a
,
Calmeiro T a
,
Martins R a
,
Klein A b
,
Fortunato E a
. 2016.
Highly conductive grain boundaries in copper oxide thin films
.
Journal of Applied Physics. 119
Abstract
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J
b c Jiang G a
,
b c Liu A a
,
b c Liu G a
,
b c Zhu C a
,
b c Meng Y a
,
Shin B d
,
Fortunato E e
,
Martins R e
,
b c Shan F a
. 2016.
Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors
.
Applied Physics Letters. 109
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Jin JW a
,
Nathan A b
,
Barquinha P c
,
Pereira L c
,
Fortunato E c
,
Martins R c
,
Cobb B d
. 2016.
Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress
.
AIP Advances. 6
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K
b Kiazadeh A a
,
c Gomes HL b
,
Barquinha P a
,
Martins J a
,
Rovisco A a
,
Pinto JV a
,
Martins R a
,
Fortunato E a
. 2016.
Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors
.
Applied Physics Letters. 109
Abstract
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L
b c Liu A a
,
b c Liu G a
,
b c Zhu H a
,
Shin B d
,
Fortunato E e
,
Martins R e
,
b c Shan F a
. 2016.
Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors
.
Journal of Materials Chemistry C. 4:4478-4484.
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b c Liu A a
,
b c Liu G a
,
b c Zhu H a
,
Shin B d
,
Fortunato E e
,
Martins R e
,
b c Shan F a
. 2016.
Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric
.
Applied Physics Letters. 108
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M
Martins J a
,
Barquinha P a
,
Goes J b
. 2016.
TCAD simulation of amorphous indium-gallium-zinc oxide thin-film transistors
.
IFIP Advances in Information and Communication Technology. 470:551-557.
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Moldovan O a
,
Castro-Carranza A b
,
Cerdeira A c
,
Estrada M c
,
Barquinha P d
,
Martins R d
,
Fortunato E d
,
Miljakovic S e
,
Iñiguez B a
. 2016.
A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors
.
Solid-State Electronics. 126:81-86.
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N
Niang KM a
,
Barquinha PMC b
,
Martins RFP b
,
Cobb B c
,
Powell MJ d
,
Flewitt AJ a
. 2016.
A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress
.
Applied Physics Letters. 108
Abstract
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S
b c Shan F a
,
b c Liu A a
,
Zhu H c
,
Kong W a
,
Liu J c
,
Shin B d
,
Fortunato E e
,
Martins R e
,
b c Liu G a
. 2016.
High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric
.
Journal of Materials Chemistry C. 4:9438-9444.
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Z
b c Zhu C a
,
b c Liu A a
,
b c Liu G a
,
b c Jiang G a
,
b c Meng Y a
,
Fortunato E d
,
Martins R d
,
b c Shan F a
. 2016.
Low-temperature, nontoxic water-induced high-: K zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors
.
Journal of Materials Chemistry C. 4:10715-10721.
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