High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

TitleHigh-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric
Publication TypeJournal Article
Year of Publication2016
Authorsb c Shan F a, b c Liu A a, Zhu H c, Kong W a, Liu J c, Shin B d, Fortunato E e, Martins R e, b c Liu G a
JournalJournal of Materials Chemistry C
KeywordsAlcohols, Annealing temperatures, CMOS integrated circuits, Device engineering, Gate dielectrics, High-k dielectric, Hole mobility, Large-area substrates, Low temperatures, Magnetic semiconductors, Metals, MOS devices, Oxide films, Oxide semiconductors, Oxide thinfilm transistors (TFTs), Polyol reductions, Research studies, Solution-processed, Substrates, Thin film circuits, Thin film transistors, Thin films, Transistors

Although there are a few research studies on solution-processed p-channel oxide thin-film transistors (TFTs), the strict fabrication conditions and the poor electrical properties have limited their applications in low-power complementary metal oxide semiconductor (CMOS) electronics. Here, the application of the polyol reduction method for processing p-type CuxO and NiOx channel layers and their implementation in TFT devices are reported. The optimized CuxO and NiOx TFTs were achieved at low annealing temperatures (∼300 °C) and exhibited decent electrical properties. Encouraged by the inspiring results obtained on SiO2/Si substrates, the TFT performance was further optimized by device engineering, employing high-k AlOx as the gate dielectric. The fully solution-processed NiOx/AlOx TFT could be operated at a low voltage of 3.5 V and exhibits a high hole mobility of around 25 cm2 V-1 s-1. Our work demonstrates the ability to grow high-quality p-type oxide films and devices via the polyol reduction method over large area substrates while at the same time it provides guidelines for further p-type oxide material and device improvements. © The Royal Society of Chemistry 2016.