<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Shan, F.a b c</style></author><author><style face="normal" font="default" size="100%">Liu, A.a b c</style></author><author><style face="normal" font="default" size="100%">Zhu, H.c</style></author><author><style face="normal" font="default" size="100%">Kong, W.a</style></author><author><style face="normal" font="default" size="100%">Liu, J.c</style></author><author><style face="normal" font="default" size="100%">Shin, B.d</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.e</style></author><author><style face="normal" font="default" size="100%">Martins, R.e</style></author><author><style face="normal" font="default" size="100%">Liu, G.a b c</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Materials Chemistry C</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Alcohols</style></keyword><keyword><style  face="normal" font="default" size="100%">Annealing temperatures</style></keyword><keyword><style  face="normal" font="default" size="100%">CMOS integrated circuits</style></keyword><keyword><style  face="normal" font="default" size="100%">Device engineering</style></keyword><keyword><style  face="normal" font="default" size="100%">Gate dielectrics</style></keyword><keyword><style  face="normal" font="default" size="100%">High-k dielectric</style></keyword><keyword><style  face="normal" font="default" size="100%">Hole mobility</style></keyword><keyword><style  face="normal" font="default" size="100%">Large-area substrates</style></keyword><keyword><style  face="normal" font="default" size="100%">Low temperatures</style></keyword><keyword><style  face="normal" font="default" size="100%">Magnetic semiconductors</style></keyword><keyword><style  face="normal" font="default" size="100%">Metals</style></keyword><keyword><style  face="normal" font="default" size="100%">MOS devices</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxide films</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxide semiconductors</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxide thinfilm transistors (TFTs)</style></keyword><keyword><style  face="normal" font="default" size="100%">Polyol reductions</style></keyword><keyword><style  face="normal" font="default" size="100%">Research studies</style></keyword><keyword><style  face="normal" font="default" size="100%">Solution-processed</style></keyword><keyword><style  face="normal" font="default" size="100%">Substrates</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film circuits</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin films</style></keyword><keyword><style  face="normal" font="default" size="100%">Transistors</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84991618970&amp;doi=10.1039%2fc6tc02137a&amp;partnerID=40&amp;md5=92e17e74d206227fc2232cc92da21ded</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">40</style></number><publisher><style face="normal" font="default" size="100%">Royal Society of Chemistry</style></publisher><volume><style face="normal" font="default" size="100%">4</style></volume><pages><style face="normal" font="default" size="100%">9438-9444</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Although there are a few research studies on solution-processed p-channel oxide thin-film transistors (TFTs), the strict fabrication conditions and the poor electrical properties have limited their applications in low-power complementary metal oxide semiconductor (CMOS) electronics. Here, the application of the polyol reduction method for processing p-type CuxO and NiOx channel layers and their implementation in TFT devices are reported. The optimized CuxO and NiOx TFTs were achieved at low annealing temperatures (∼300 °C) and exhibited decent electrical properties. Encouraged by the inspiring results obtained on SiO2/Si substrates, the TFT performance was further optimized by device engineering, employing high-k AlOx as the gate dielectric. The fully solution-processed NiOx/AlOx TFT could be operated at a low voltage of 3.5 V and exhibits a high hole mobility of around 25 cm2 V-1 s-1. Our work demonstrates the ability to grow high-quality p-type oxide films and devices via the polyol reduction method over large area substrates while at the same time it provides guidelines for further p-type oxide material and device improvements. © The Royal Society of Chemistry 2016.</style></abstract><notes><style face="normal" font="default" size="100%">cited By 0</style></notes></record></records></xml>