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2016
b c Liu A a, b c Liu G a, b c Zhu H a, Shin B d, Fortunato E e, Martins R e, b c Shan F a.  2016.  Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors. Journal of Materials Chemistry C. 4:4478-4484. Abstract
Grey P, Pereira L, Pereira S, Barquinha P, Cunha I, Martins R, Fortunato E.  2016.  Electrochemical transistor based on tungsten oxide with optoelectronic properties. IFIP Advances in Information and Communication Technology. 470:542-550. Abstract
b c Shan F a, b c Liu A a, Zhu H c, Kong W a, Liu J c, Shin B d, Fortunato E e, Martins R e, b c Liu G a.  2016.  High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric. Journal of Materials Chemistry C. 4:9438-9444. Abstract
b c Liu A a, b c Liu G a, b c Zhu H a, Shin B d, Fortunato E e, Martins R e, b c Shan F a.  2016.  Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric. Applied Physics Letters. 108 Abstract
b Kiazadeh A a, c Gomes HL b, Barquinha P a, Martins J a, Rovisco A a, Pinto JV a, Martins R a, Fortunato E a.  2016.  Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors. Applied Physics Letters. 109 Abstract
b c Zhu C a, b c Liu A a, b c Liu G a, b c Jiang G a, b c Meng Y a, Fortunato E d, Martins R d, b c Shan F a.  2016.  Low-temperature, nontoxic water-induced high-: K zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors. Journal of Materials Chemistry C. 4:10715-10721. Abstract
Carlos E, Branquinho R, Kiazadeh A, Barquinha P, Martins R, Fortunato E.  2016.  UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors. ACS Applied Materials and Interfaces. 8:31100-31108. Abstract