<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Grey, P.</style></author><author><style face="normal" font="default" size="100%">Pereira, L.</style></author><author><style face="normal" font="default" size="100%">Pereira, S.</style></author><author><style face="normal" font="default" size="100%">Barquinha, P.</style></author><author><style face="normal" font="default" size="100%">Cunha, I.</style></author><author><style face="normal" font="default" size="100%">Martins, R.</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Camarinha-Matos L.M., Falcao A.J., Vafaei N., Najdi S.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Electrochemical transistor based on tungsten oxide with optoelectronic properties</style></title><secondary-title><style face="normal" font="default" size="100%">IFIP Advances in Information and Communication Technology</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Comprehensive analysis</style></keyword><keyword><style  face="normal" font="default" size="100%">Computation theory</style></keyword><keyword><style  face="normal" font="default" size="100%">Computer circuits</style></keyword><keyword><style  face="normal" font="default" size="100%">Display devices</style></keyword><keyword><style  face="normal" font="default" size="100%">Display technologies</style></keyword><keyword><style  face="normal" font="default" size="100%">Electrical modulation</style></keyword><keyword><style  face="normal" font="default" size="100%">Electrochemical transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Electrochromism</style></keyword><keyword><style  face="normal" font="default" size="100%">Electrolytes</style></keyword><keyword><style  face="normal" font="default" size="100%">Embedded systems</style></keyword><keyword><style  face="normal" font="default" size="100%">Fuel cells</style></keyword><keyword><style  face="normal" font="default" size="100%">New applications</style></keyword><keyword><style  face="normal" font="default" size="100%">Optoelectronic devices</style></keyword><keyword><style  face="normal" font="default" size="100%">Optoelectronic properties</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxide semiconductors</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxides</style></keyword><keyword><style  face="normal" font="default" size="100%">Polyelectrolytes</style></keyword><keyword><style  face="normal" font="default" size="100%">Polymer electrolyte</style></keyword><keyword><style  face="normal" font="default" size="100%">Polymer films</style></keyword><keyword><style  face="normal" font="default" size="100%">Reconfigurable hardware</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin films</style></keyword><keyword><style  face="normal" font="default" size="100%">Transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Tungsten</style></keyword><keyword><style  face="normal" font="default" size="100%">Tungsten oxide</style></keyword><keyword><style  face="normal" font="default" size="100%">Ultrathin films</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84962076654&amp;doi=10.1007%2f978-3-319-31165-4_51&amp;partnerID=40&amp;md5=56c48662ceb838e1c3d8210d4ed0f2c1</style></url></web-urls></urls><publisher><style face="normal" font="default" size="100%">Springer New York LLC</style></publisher><volume><style face="normal" font="default" size="100%">470</style></volume><pages><style face="normal" font="default" size="100%">542-550</style></pages><isbn><style face="normal" font="default" size="100%">9783319311647</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">This paper reports the integration of an electrochromic inorganic oxide semiconductor (WO3) into an electrolyte gated transistor device. The resulting electrochromic transistor (EC-T) is a novel optoelectronic device, exhibiting simultaneous optical and electrical modulation. These devices show an On- Off ratio of 5×106and a transconductance (gm) of 3.59 mS, for gate voltages (VG) between −2 and 2 V, which, to the authors knowledge, are one of the best values ever reported for this type of electrochemical transistors. The simple and low-cost processing together with the electrical/optical performances, well supported into a comprehensive analysis of device physics, opens doors for a wide range of new applications in display technologies, biosensors, fuel cells or electrochemical logic circuits. © IFIP International Federation for Information Processing 2016.</style></abstract><notes><style face="normal" font="default" size="100%">cited By 0; Conference of 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2016 ; Conference Date: 11 April 2016 Through 13 April 2016; Conference Code:172549</style></notes></record></records></xml>