Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors

TitleEco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors
Publication TypeJournal Article
Year of Publication2016
Authorsb c Liu A a, b c Liu G a, b c Zhu H a, Shin B d, Fortunato E e, Martins R e, b c Shan F a
JournalJournal of Materials Chemistry C
Volume4
Pagination4478-4484
ISSN20507534
KeywordsAmorphous films, Annealing temperatures, Environmental protection, Field-effect mobilities, Gate dielectrics, Indium-tungsten-oxide, Morphological characteristic, Organic solvents, Oxide films, Oxides, Semiconducting indium, Semiconductor thin films, Slope stability, Thin film transistors, Thin films, Thin-film transistor (TFTs), Threshold voltage, Threshold voltage shifts, Transistors, Tungsten, Tungsten concentrations
Abstract

In this study, amorphous indium-tungsten oxide (IWO) semiconductor thin films were prepared by an eco-friendly spin-coating process using ethanol and water as solvents. The electrical properties of IWO thin-film transistors (TFTs), together with the structural and morphological characteristics of IWO thin films, were systematically investigated as functions of tungsten concentration and annealing temperature. The optimized IWO channel layer was then integrated on an aqueous aluminum oxide (AlOx) gate dielectric. It is observed that the solution-processed IWO/AlOx TFT presents high stability and improved characteristics, such as an on/off current ratio of 5 × 107, a field-effect mobility of 15.3 cm2 V-1 s-1, a small subthreshold slope of 68 mV dec-1, and a threshold voltage shift of 0.15 V under bias stress for 2 h. The IWO/AlOx TFT could be operated at a low voltage of 2 V, which was 15 times lower than that of conventional SiO2-based devices. The solution-processed IWO thin films synthesized in a green route would be promising candidates for large-area and high-performance low-cost devices. © The Royal Society of Chemistry 2016.

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84971278335&doi=10.1039%2fc6tc00474a&partnerID=40&md5=9701311b5329ba55ccb548cfc68e65f3
DOI10.1039/c6tc00474a