<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Liu, A.a b c</style></author><author><style face="normal" font="default" size="100%">Liu, G.a b c</style></author><author><style face="normal" font="default" size="100%">Zhu, H.a b c</style></author><author><style face="normal" font="default" size="100%">Shin, B.d</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.e</style></author><author><style face="normal" font="default" size="100%">Martins, R.e</style></author><author><style face="normal" font="default" size="100%">Shan, F.a b c</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Materials Chemistry C</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Amorphous films</style></keyword><keyword><style  face="normal" font="default" size="100%">Annealing temperatures</style></keyword><keyword><style  face="normal" font="default" size="100%">Environmental protection</style></keyword><keyword><style  face="normal" font="default" size="100%">Field-effect mobilities</style></keyword><keyword><style  face="normal" font="default" size="100%">Gate dielectrics</style></keyword><keyword><style  face="normal" font="default" size="100%">Indium-tungsten-oxide</style></keyword><keyword><style  face="normal" font="default" size="100%">Morphological characteristic</style></keyword><keyword><style  face="normal" font="default" size="100%">Organic solvents</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxide films</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxides</style></keyword><keyword><style  face="normal" font="default" size="100%">Semiconducting indium</style></keyword><keyword><style  face="normal" font="default" size="100%">Semiconductor thin films</style></keyword><keyword><style  face="normal" font="default" size="100%">Slope stability</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin films</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin-film transistor (TFTs)</style></keyword><keyword><style  face="normal" font="default" size="100%">Threshold voltage</style></keyword><keyword><style  face="normal" font="default" size="100%">Threshold voltage shifts</style></keyword><keyword><style  face="normal" font="default" size="100%">Transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Tungsten</style></keyword><keyword><style  face="normal" font="default" size="100%">Tungsten concentrations</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84971278335&amp;doi=10.1039%2fc6tc00474a&amp;partnerID=40&amp;md5=9701311b5329ba55ccb548cfc68e65f3</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">20</style></number><publisher><style face="normal" font="default" size="100%">Royal Society of Chemistry</style></publisher><volume><style face="normal" font="default" size="100%">4</style></volume><pages><style face="normal" font="default" size="100%">4478-4484</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this study, amorphous indium-tungsten oxide (IWO) semiconductor thin films were prepared by an eco-friendly spin-coating process using ethanol and water as solvents. The electrical properties of IWO thin-film transistors (TFTs), together with the structural and morphological characteristics of IWO thin films, were systematically investigated as functions of tungsten concentration and annealing temperature. The optimized IWO channel layer was then integrated on an aqueous aluminum oxide (AlOx) gate dielectric. It is observed that the solution-processed IWO/AlOx TFT presents high stability and improved characteristics, such as an on/off current ratio of 5 × 107, a field-effect mobility of 15.3 cm2 V-1 s-1, a small subthreshold slope of 68 mV dec-1, and a threshold voltage shift of 0.15 V under bias stress for 2 h. The IWO/AlOx TFT could be operated at a low voltage of 2 V, which was 15 times lower than that of conventional SiO2-based devices. The solution-processed IWO thin films synthesized in a green route would be promising candidates for large-area and high-performance low-cost devices. © The Royal Society of Chemistry 2016.</style></abstract><notes><style face="normal" font="default" size="100%">cited By 1</style></notes></record></records></xml>