<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Zhu, C.a b c</style></author><author><style face="normal" font="default" size="100%">Liu, A.a b c</style></author><author><style face="normal" font="default" size="100%">Liu, G.a b c</style></author><author><style face="normal" font="default" size="100%">Jiang, G.a b c</style></author><author><style face="normal" font="default" size="100%">Meng, Y.a b c</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.d</style></author><author><style face="normal" font="default" size="100%">Martins, R.d</style></author><author><style face="normal" font="default" size="100%">Shan, F.a b c</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Low-temperature, nontoxic water-induced high-: K zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Materials Chemistry C</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Annealing</style></keyword><keyword><style  face="normal" font="default" size="100%">Annealing temperatures</style></keyword><keyword><style  face="normal" font="default" size="100%">Capacitance</style></keyword><keyword><style  face="normal" font="default" size="100%">CMOS integrated circuits</style></keyword><keyword><style  face="normal" font="default" size="100%">Complementary metal oxide semiconductors</style></keyword><keyword><style  face="normal" font="default" size="100%">Electrical performance</style></keyword><keyword><style  face="normal" font="default" size="100%">Fabrication</style></keyword><keyword><style  face="normal" font="default" size="100%">Field effect transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Flexible electronics</style></keyword><keyword><style  face="normal" font="default" size="100%">Flexible substrate</style></keyword><keyword><style  face="normal" font="default" size="100%">Gate dielectrics</style></keyword><keyword><style  face="normal" font="default" size="100%">High electron mobility</style></keyword><keyword><style  face="normal" font="default" size="100%">High-k dielectric</style></keyword><keyword><style  face="normal" font="default" size="100%">Hole mobility</style></keyword><keyword><style  face="normal" font="default" size="100%">Low-temperature fabrication</style></keyword><keyword><style  face="normal" font="default" size="100%">Magnetic semiconductors</style></keyword><keyword><style  face="normal" font="default" size="100%">Metals</style></keyword><keyword><style  face="normal" font="default" size="100%">MOS devices</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxide films</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxide semiconductors</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxide thin-film transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxides</style></keyword><keyword><style  face="normal" font="default" size="100%">Semiconducting organic compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">Substrates</style></keyword><keyword><style  face="normal" font="default" size="100%">Temperature</style></keyword><keyword><style  face="normal" font="default" size="100%">Thermal annealing process</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film circuits</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin films</style></keyword><keyword><style  face="normal" font="default" size="100%">Transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Zirconia</style></keyword><keyword><style  face="normal" font="default" size="100%">Zirconium alloys</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84996805902&amp;doi=10.1039%2fc6tc02607a&amp;partnerID=40&amp;md5=bfafbaa30f8d4a850c7eade54ca49a22</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">45</style></number><publisher><style face="normal" font="default" size="100%">Royal Society of Chemistry</style></publisher><volume><style face="normal" font="default" size="100%">4</style></volume><pages><style face="normal" font="default" size="100%">10715-10721</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">The fabrication of water-induced amorphous high-k zirconium oxide (ZrOx) dielectrics has been proposed with the objective of achieving high performance and reducing costs for next generation displays. In this study, the as-prepared ZrOx thin films were fabricated by a sequential process, including a UV-assisted photochemical treatment and a thermal annealing process at temperatures lower than 300 °C. It is observed that the leakage current density of ZrOx thin films decreases, and the capacitance increases with increasing annealing temperatures. To verify the application possibilities of ZrOx thin films as gate dielectrics in complementary metal-oxide semiconductor (CMOS) electronics, both n-type In2O3 and p-type NiOx channel layers were integrated with ZrOx dielectrics and their corresponding electrical performances were examined. The In2O3/ZrOx thin film transistor (TFT) annealed at 250 °C exhibited a high electron mobility of 10.78 cm2 V-1 s-1, a small subthreshold swing of 75 mV dec-1, and a large on-off current ratio (Ion/Ioff) of around 106, respectively. Moreover, the p-type NiOx/ZrOx TFT exhibited an Ion/Ioff of 105 and a hole mobility of 4.8 cm2 V-1 s-1. It is noted that both n- and p-channel oxide TFTs on ZrOx could be operated at voltages lower than 4 V. The low-temperature fabrication process marks a great step towards the further development of low-cost, all-oxide CMOS electronics on flexible substrates. © 2016 The Royal Society of Chemistry.</style></abstract><notes><style face="normal" font="default" size="100%">cited By 0</style></notes></record></records></xml>