@article {Shan20169438,
	title = {High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric},
	journal = {Journal of Materials Chemistry C},
	volume = {4},
	number = {40},
	year = {2016},
	note = {cited By 0},
	pages = {9438-9444},
	publisher = {Royal Society of Chemistry},
	abstract = {Although there are a few research studies on solution-processed p-channel oxide thin-film transistors (TFTs), the strict fabrication conditions and the poor electrical properties have limited their applications in low-power complementary metal oxide semiconductor (CMOS) electronics. Here, the application of the polyol reduction method for processing p-type CuxO and NiOx channel layers and their implementation in TFT devices are reported. The optimized CuxO and NiOx TFTs were achieved at low annealing temperatures (\~{}300 {\textdegree}C) and exhibited decent electrical properties. Encouraged by the inspiring results obtained on SiO2/Si substrates, the TFT performance was further optimized by device engineering, employing high-k AlOx as the gate dielectric. The fully solution-processed NiOx/AlOx TFT could be operated at a low voltage of 3.5 V and exhibits a high hole mobility of around 25 cm2 V-1 s-1. Our work demonstrates the ability to grow high-quality p-type oxide films and devices via the polyol reduction method over large area substrates while at the same time it provides guidelines for further p-type oxide material and device improvements. {\textcopyright} The Royal Society of Chemistry 2016.},
	keywords = {Alcohols, Annealing temperatures, CMOS integrated circuits, Device engineering, Gate dielectrics, High-k dielectric, Hole mobility, Large-area substrates, Low temperatures, Magnetic semiconductors, Metals, MOS devices, Oxide films, Oxide semiconductors, Oxide thinfilm transistors (TFTs), Polyol reductions, Research studies, Solution-processed, Substrates, Thin film circuits, Thin film transistors, Thin films, Transistors},
	issn = {20507534},
	doi = {10.1039/c6tc02137a},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84991618970\&doi=10.1039\%2fc6tc02137a\&partnerID=40\&md5=92e17e74d206227fc2232cc92da21ded},
	author = {Shan, F.a b c and Liu, A.a b c and Zhu, H.c and Kong, W.a and Liu, J.c and Shin, B.d and Fortunato, E.e and Martins, R.e and Liu, G.a b c}
}
