<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Liu, A.a b c</style></author><author><style face="normal" font="default" size="100%">Liu, G.a b c</style></author><author><style face="normal" font="default" size="100%">Zhu, H.a b c</style></author><author><style face="normal" font="default" size="100%">Shin, B.d</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.e</style></author><author><style face="normal" font="default" size="100%">Martins, R.e</style></author><author><style face="normal" font="default" size="100%">Shan, F.a b c</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Aluminum</style></keyword><keyword><style  face="normal" font="default" size="100%">Annealing temperatures</style></keyword><keyword><style  face="normal" font="default" size="100%">Complementary metal oxide semiconductors</style></keyword><keyword><style  face="normal" font="default" size="100%">Electrical performance</style></keyword><keyword><style  face="normal" font="default" size="100%">Electronic application</style></keyword><keyword><style  face="normal" font="default" size="100%">Field effect transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Gate dielectrics</style></keyword><keyword><style  face="normal" font="default" size="100%">High-k dielectric</style></keyword><keyword><style  face="normal" font="default" size="100%">Hole mobility</style></keyword><keyword><style  face="normal" font="default" size="100%">Low power electronics</style></keyword><keyword><style  face="normal" font="default" size="100%">Low temperature solutions</style></keyword><keyword><style  face="normal" font="default" size="100%">Magnetic semiconductors</style></keyword><keyword><style  face="normal" font="default" size="100%">Metals</style></keyword><keyword><style  face="normal" font="default" size="100%">MOS devices</style></keyword><keyword><style  face="normal" font="default" size="100%">Nickel</style></keyword><keyword><style  face="normal" font="default" size="100%">Nickel oxide</style></keyword><keyword><style  face="normal" font="default" size="100%">Nickel oxide thin films</style></keyword><keyword><style  face="normal" font="default" size="100%">Optoelectronic devices</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxide films</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxide semiconductors</style></keyword><keyword><style  face="normal" font="default" size="100%">P-type oxide semiconductors</style></keyword><keyword><style  face="normal" font="default" size="100%">Reconfigurable hardware</style></keyword><keyword><style  face="normal" font="default" size="100%">Semiconducting organic compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">Semiconductor devices</style></keyword><keyword><style  face="normal" font="default" size="100%">Temperature</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin films</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin-film transistor (TFTs)</style></keyword><keyword><style  face="normal" font="default" size="100%">Transistors</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84974623209&amp;doi=10.1063%2f1.4953460&amp;partnerID=40&amp;md5=8ca2c9649eb0bc72c1ad311cd07ae188</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">23</style></number><publisher><style face="normal" font="default" size="100%">American Institute of Physics Inc.</style></publisher><volume><style face="normal" font="default" size="100%">108</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Solution-processed p-type oxide semiconductors have recently attracted increasing interests for the applications in low-cost optoelectronic devices and low-power consumption complementary metal-oxide-semiconductor circuits. In this work, p-type nickel oxide (NiOx) thin films were prepared using low-temperature solution process and integrated as the channel layer in thin-film transistors (TFTs). The electrical properties of NiOx TFTs, together with the characteristics of NiOx thin films, were systematically investigated as a function of annealing temperature. By introducing aqueous high-k aluminum oxide (Al2O3) gate dielectric, the electrical performance of NiOx TFT was improved significantly compared with those based on SiO2 dielectric. Particularly, the hole mobility was found to be 60 times enhancement, quantitatively from 0.07 to 4.4 cm2/V s, which is mainly beneficial from the high areal capacitance of the Al2O3 dielectric and high-quality NiOx/Al2O3 interface. This simple solution-based method for producing p-type oxide TFTs is promising for next-generation oxide-based electronic applications. © 2016 Author(s).</style></abstract><notes><style face="normal" font="default" size="100%">cited By 0</style></notes></record></records></xml>