<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Carlos, E.</style></author><author><style face="normal" font="default" size="100%">Branquinho, R.</style></author><author><style face="normal" font="default" size="100%">Kiazadeh, A.</style></author><author><style face="normal" font="default" size="100%">Barquinha, P.</style></author><author><style face="normal" font="default" size="100%">Martins, R.</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors</style></title><secondary-title><style face="normal" font="default" size="100%">ACS Applied Materials and Interfaces</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Aluminum</style></keyword><keyword><style  face="normal" font="default" size="100%">Aluminum oxides</style></keyword><keyword><style  face="normal" font="default" size="100%">Amorphous films</style></keyword><keyword><style  face="normal" font="default" size="100%">Combustion synthesis</style></keyword><keyword><style  face="normal" font="default" size="100%">Dielectric materials</style></keyword><keyword><style  face="normal" font="default" size="100%">Flexible electronics</style></keyword><keyword><style  face="normal" font="default" size="100%">Indium</style></keyword><keyword><style  face="normal" font="default" size="100%">Irradiation</style></keyword><keyword><style  face="normal" font="default" size="100%">Low operating voltage</style></keyword><keyword><style  face="normal" font="default" size="100%">Low temperatures</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxide films</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxides</style></keyword><keyword><style  face="normal" font="default" size="100%">Semiconductor devices</style></keyword><keyword><style  face="normal" font="default" size="100%">Slope stability</style></keyword><keyword><style  face="normal" font="default" size="100%">Solution combustion synthesis</style></keyword><keyword><style  face="normal" font="default" size="100%">Substrates</style></keyword><keyword><style  face="normal" font="default" size="100%">Temperature</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film circuits</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin films</style></keyword><keyword><style  face="normal" font="default" size="100%">Transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">UV irradiation</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84996964966&amp;doi=10.1021%2facsami.6b06321&amp;partnerID=40&amp;md5=be5982be360fcc33fcdc4ac273bb016c</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">45</style></number><publisher><style face="normal" font="default" size="100%">American Chemical Society</style></publisher><volume><style face="normal" font="default" size="100%">8</style></volume><pages><style face="normal" font="default" size="100%">31100-31108</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Solution processing of amorphous metal oxides has lately been used as an option to implement in flexible electronics, allowing a reduction of the associated costs and high performance. However, the research has focused more on the semiconductor layer rather than on the insulator layer, which is related to the stability and performance of the devices. This work aims to evaluate amorphous aluminum oxide thin films produced by combustion synthesis and the influence of far-ultraviolet (FUV) irradiation on the properties of the insulator on thin-film transistors (TFTs) using different semiconductors, in order to have compatibility with flexible substrates. An optimized dielectric layer was obtained for an annealing of 30 min assisted by FUV exposure. These thin films were applied in gallium-indium-zinc oxide TFTs as dielectrics showing the best results for TFTs annealed at 180 °C with FUV irradiation: good reproducibility with a subthreshold slope of 0.11 ± 0.01 V dec -1 and a turn-on voltage of -0.12 ± 0.05 V, low operating voltage, and good stability over time. Finally, the dielectric layer was applied in solution-processed indium oxide (In2O3) TFTs at low temperature, 180 °C, with a short processing time being compatible with flexible electronic applications. © 2016 American Chemical Society.</style></abstract><notes><style face="normal" font="default" size="100%">cited By 0</style></notes></record></records></xml>