Electrochemical transistor based on tungsten oxide with optoelectronic properties

TitleElectrochemical transistor based on tungsten oxide with optoelectronic properties
Publication TypeJournal Article
Year of Publication2016
AuthorsGrey P, Pereira L, Pereira S, Barquinha P, Cunha I, Martins R, Fortunato E
Secondary AuthorsCamarinha-Matos L.M., Falcao A.J. VNNS
JournalIFIP Advances in Information and Communication Technology
ISBN Number9783319311647
KeywordsComprehensive analysis, Computation theory, Computer circuits, Display devices, Display technologies, Electrical modulation, Electrochemical transistors, Electrochromism, Electrolytes, Embedded systems, Fuel cells, New applications, Optoelectronic devices, Optoelectronic properties, Oxide semiconductors, Oxides, Polyelectrolytes, Polymer electrolyte, Polymer films, Reconfigurable hardware, Thin films, Transistors, Tungsten, Tungsten oxide, Ultrathin films

This paper reports the integration of an electrochromic inorganic oxide semiconductor (WO3) into an electrolyte gated transistor device. The resulting electrochromic transistor (EC-T) is a novel optoelectronic device, exhibiting simultaneous optical and electrical modulation. These devices show an On- Off ratio of 5×106and a transconductance (gm) of 3.59 mS, for gate voltages (VG) between −2 and 2 V, which, to the authors knowledge, are one of the best values ever reported for this type of electrochemical transistors. The simple and low-cost processing together with the electrical/optical performances, well supported into a comprehensive analysis of device physics, opens doors for a wide range of new applications in display technologies, biosensors, fuel cells or electrochemical logic circuits. © IFIP International Federation for Information Processing 2016.