<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bahubalindruni, P.G.a</style></author><author><style face="normal" font="default" size="100%">Tavares, V.G.b</style></author><author><style face="normal" font="default" size="100%">Borme, J.c</style></author><author><style face="normal" font="default" size="100%">De Oliveira, P.G.b</style></author><author><style face="normal" font="default" size="100%">Martins, R.a</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.a</style></author><author><style face="normal" font="default" size="100%">Barquinha, P.a</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">InGaZnO thin-film-transistor-based four-quadrant high-gain analog multiplier on glass</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE Electron Device Letters</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Ambient conditions</style></keyword><keyword><style  face="normal" font="default" size="100%">Analog multipliers</style></keyword><keyword><style  face="normal" font="default" size="100%">Building signal systems</style></keyword><keyword><style  face="normal" font="default" size="100%">Data-communication</style></keyword><keyword><style  face="normal" font="default" size="100%">Feedback</style></keyword><keyword><style  face="normal" font="default" size="100%">Four-quadrant analog multipliers</style></keyword><keyword><style  face="normal" font="default" size="100%">Frequency multiplying circuits</style></keyword><keyword><style  face="normal" font="default" size="100%">Frequency response</style></keyword><keyword><style  face="normal" font="default" size="100%">Glass</style></keyword><keyword><style  face="normal" font="default" size="100%">Indium</style></keyword><keyword><style  face="normal" font="default" size="100%">Indium gallium zinc oxides</style></keyword><keyword><style  face="normal" font="default" size="100%">Large-area sensing</style></keyword><keyword><style  face="normal" font="default" size="100%">Reconfigurable hardware</style></keyword><keyword><style  face="normal" font="default" size="100%">Semiconducting organic compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">Signal processing</style></keyword><keyword><style  face="normal" font="default" size="100%">Static linearities</style></keyword><keyword><style  face="normal" font="default" size="100%">Temperature</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin films</style></keyword><keyword><style  face="normal" font="default" size="100%">Total harmonic distortion (THD)</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84963839212&amp;doi=10.1109%2fLED.2016.2535469&amp;partnerID=40&amp;md5=c0dad3ef53b468383a1d86194137a01d</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">4</style></number><publisher><style face="normal" font="default" size="100%">Institute of Electrical and Electronics Engineers Inc.</style></publisher><volume><style face="normal" font="default" size="100%">37</style></volume><pages><style face="normal" font="default" size="100%">419-421</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">This letter presents a novel high-gain four-quadrant analog multiplier using only n-type enhancement indium- gallium-zinc-oxide thin-film-transistors. The proposed circuit improves the gain by using an active load with positive feedback. A Gilbert cell with a diode-connected load is also presented for comparison purposes. Both circuits were fabricated on glass at low temperature (200 °C) and were successfully characterized at room temperature under normal ambient conditions, with a power supply of 15 V and 4-pF capacitive load. The novel circuit has shown a gain improvement of 7.2 dB over the Gilbert cell with the diode-connected load. Static linearity response, total harmonic distortion, frequency response, and power consumption are reported. This circuit is an important signal processing building block in large-area sensing and readout systems, specially if data communication is involved. © 2016 IEEE.</style></abstract><notes><style face="normal" font="default" size="100%">cited By 0</style></notes></record></records></xml>