<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bahubalindruni, P.G.a</style></author><author><style face="normal" font="default" size="100%">Kiazadeh, A.b</style></author><author><style face="normal" font="default" size="100%">Sacchetti, A.b</style></author><author><style face="normal" font="default" size="100%">Martins, J.b</style></author><author><style face="normal" font="default" size="100%">Rovisco, A.b</style></author><author><style face="normal" font="default" size="100%">Tavares, V.G.c</style></author><author><style face="normal" font="default" size="100%">Martins, R.b</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.b</style></author><author><style face="normal" font="default" size="100%">Barquinha, P.b</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Display Technology</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Channel length</style></keyword><keyword><style  face="normal" font="default" size="100%">Current gain cutoff frequency</style></keyword><keyword><style  face="normal" font="default" size="100%">Cutoff frequency</style></keyword><keyword><style  face="normal" font="default" size="100%">Field effect transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Gain measurement</style></keyword><keyword><style  face="normal" font="default" size="100%">High electron mobility transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Igzo tfts</style></keyword><keyword><style  face="normal" font="default" size="100%">Intrinsic voltage gains</style></keyword><keyword><style  face="normal" font="default" size="100%">MOS devices</style></keyword><keyword><style  face="normal" font="default" size="100%">Multifunctionality</style></keyword><keyword><style  face="normal" font="default" size="100%">Reconfigurable hardware</style></keyword><keyword><style  face="normal" font="default" size="100%">Semiconductor junctions</style></keyword><keyword><style  face="normal" font="default" size="100%">Short-channel effect</style></keyword><keyword><style  face="normal" font="default" size="100%">Sub-threshold regions</style></keyword><keyword><style  face="normal" font="default" size="100%">Temperature</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin-film technology</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84975226429&amp;doi=10.1109%2fJDT.2016.2550610&amp;partnerID=40&amp;md5=eef4578b910dc61e4902e03a059d97f8</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">6</style></number><publisher><style face="normal" font="default" size="100%">IEEE Computer Society</style></publisher><volume><style face="normal" font="default" size="100%">12</style></volume><pages><style face="normal" font="default" size="100%">515-518</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">This paper presents a study concerning the role of channel length scaling on IGZO TFT technology benchmark parameters, which are fabricated at temperatures not exceeding 180\, ^{\circ}C. The parameters under investigation are unity current-gain cutoff frequency, intrinsic voltage-gain, and on-resistance of the bottom-gate IGZO TFTs. As the channel length varies from 160 to 3 μm, the measured cutoff frequency increases from 163 {\rm kHz} to 111.5 {\rm MHz}, which is a superior value compared to the other competing low-temperature thin-film technologies, such as organic TFTs. On the other hand, for the same transistor dimensions, the measured intrinsic voltage-gain is changing from 165 to 5.3 and the on-resistance is decreasing from 1135.6 to 26.1 kØmega. TFTs with smaller channel length (3 μ m) have shown a highly negative turn-on voltage and hump in the subthreshold region, which can be attributed to short channel effects. The results obtained here, together with their interpretation based on device physics, provide crucial information for accurate IC design, enabling an adequate selection of device dimensions to maximize the performance of different circuit building blocks assuring the multifunctionality demanded by system-on-panel concepts. © 2005-2012 IEEE.</style></abstract><notes><style face="normal" font="default" size="100%">cited By 0</style></notes></record></records></xml>