InGaZnO thin-film-transistor-based four-quadrant high-gain analog multiplier on glass

TitleInGaZnO thin-film-transistor-based four-quadrant high-gain analog multiplier on glass
Publication TypeJournal Article
Year of Publication2016
AuthorsBahubalindruni PG a, Tavares VG b, Borme J c, De Oliveira PG b, Martins R a, Fortunato E a, Barquinha P a
JournalIEEE Electron Device Letters
KeywordsAmbient conditions, Analog multipliers, Building signal systems, Data-communication, Feedback, Four-quadrant analog multipliers, Frequency multiplying circuits, Frequency response, Glass, Indium, Indium gallium zinc oxides, Large-area sensing, Reconfigurable hardware, Semiconducting organic compounds, Signal processing, Static linearities, Temperature, Thin film transistors, Thin films, Total harmonic distortion (THD)

This letter presents a novel high-gain four-quadrant analog multiplier using only n-type enhancement indium- gallium-zinc-oxide thin-film-transistors. The proposed circuit improves the gain by using an active load with positive feedback. A Gilbert cell with a diode-connected load is also presented for comparison purposes. Both circuits were fabricated on glass at low temperature (200 °C) and were successfully characterized at room temperature under normal ambient conditions, with a power supply of 15 V and 4-pF capacitive load. The novel circuit has shown a gain improvement of 7.2 dB over the Gilbert cell with the diode-connected load. Static linearity response, total harmonic distortion, frequency response, and power consumption are reported. This circuit is an important signal processing building block in large-area sensing and readout systems, specially if data communication is involved. © 2016 IEEE.