%0 Journal Article %J IEEE Electron Device Letters %D 2016 %T InGaZnO thin-film-transistor-based four-quadrant high-gain analog multiplier on glass %A Bahubalindruni, P.G.a %A Tavares, V.G.b %A Borme, J.c %A De Oliveira, P.G.b %A Martins, R.a %A Fortunato, E.a %A Barquinha, P.a %I Institute of Electrical and Electronics Engineers Inc. %K Ambient conditions %K Analog multipliers %K Building signal systems %K Data-communication %K Feedback %K Four-quadrant analog multipliers %K Frequency multiplying circuits %K Frequency response %K Glass %K Indium %K Indium gallium zinc oxides %K Large-area sensing %K Reconfigurable hardware %K Semiconducting organic compounds %K Signal processing %K Static linearities %K Temperature %K Thin film transistors %K Thin films %K Total harmonic distortion (THD) %P 419-421 %R 10.1109/LED.2016.2535469 %U https://www.scopus.com/inward/record.uri?eid=2-s2.0-84963839212&doi=10.1109%2fLED.2016.2535469&partnerID=40&md5=c0dad3ef53b468383a1d86194137a01d %V 37 %X This letter presents a novel high-gain four-quadrant analog multiplier using only n-type enhancement indium- gallium-zinc-oxide thin-film-transistors. The proposed circuit improves the gain by using an active load with positive feedback. A Gilbert cell with a diode-connected load is also presented for comparison purposes. Both circuits were fabricated on glass at low temperature (200 °C) and were successfully characterized at room temperature under normal ambient conditions, with a power supply of 15 V and 4-pF capacitive load. The novel circuit has shown a gain improvement of 7.2 dB over the Gilbert cell with the diode-connected load. Static linearity response, total harmonic distortion, frequency response, and power consumption are reported. This circuit is an important signal processing building block in large-area sensing and readout systems, specially if data communication is involved. © 2016 IEEE. %Z cited By 0