@article {Martins2016551,
	title = {TCAD simulation of amorphous indium-gallium-zinc oxide thin-film transistors},
	journal = {IFIP Advances in Information and Communication Technology},
	volume = {470},
	year = {2016},
	note = {cited By 0; Conference of 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2016 ; Conference Date: 11 April 2016 Through 13 April 2016; Conference Code:172549},
	pages = {551-557},
	publisher = {Springer New York LLC},
	abstract = {Indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are simulated using TCAD software. Nonlinearities observed in fabricated devices are obtained through simulation and corresponding physical characteristics are further investigated. For small channel length (below 1 μm) TFTs{\textquoteright} simulations show short channel effects, namely drain-induced barrier lowering (DIBL), and effectively source-channel barrier is shown to decrease with drain bias. Simulations with increasing shallow donor-like states result in transfer characteristics presenting hump-like behavior as typically observed after gate bias stress. Additionally, dual-gate architecture is simulated, exhibiting threshold voltage modulation by the second gate biasing. {\textcopyright} IFIP International Federation for Information Processing 2016.},
	keywords = {Amorphous films, Amorphous semiconductors, Amorphous-indium gallium zinc oxides, DOS, Drain-induced barrier lowering, Electronic design automation, Embedded systems, Field effect transistors, Gallium, IGZO, Indium, Indium-gallium-zinc-oxide thin-film transistors (tfts) (IGZO), MOS devices, Physical characteristics, Reconfigurable hardware, TCAD simulation, Thin film transistors, Thin films, Threshold voltage, Threshold voltage modulations, Transfer characteristics, Zinc, Zinc oxide},
	isbn = {9783319311647},
	issn = {18684238},
	doi = {10.1007/978-3-319-31165-4_52},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84962074297\&doi=10.1007\%2f978-3-319-31165-4_52\&partnerID=40\&md5=0f012d56a09636714762e7bddc928ccb},
	author = {Martins, J.a and Barquinha, P.a and Goes, J.b},
	editor = {Camarinha-Matos L.M., Falcao A.J., Vafaei N., Najdi S.}
}
