<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Moldovan, O.a</style></author><author><style face="normal" font="default" size="100%">Castro-Carranza, A.b</style></author><author><style face="normal" font="default" size="100%">Cerdeira, A.c</style></author><author><style face="normal" font="default" size="100%">Estrada, M.c</style></author><author><style face="normal" font="default" size="100%">Barquinha, P.d</style></author><author><style face="normal" font="default" size="100%">Martins, R.d</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.d</style></author><author><style face="normal" font="default" size="100%">Miljakovic, S.e</style></author><author><style face="normal" font="default" size="100%">Iñiguez, B.a</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors</style></title><secondary-title><style face="normal" font="default" size="100%">Solid-State Electronics</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Amorphous films</style></keyword><keyword><style  face="normal" font="default" size="100%">Compact model</style></keyword><keyword><style  face="normal" font="default" size="100%">Computer aided design</style></keyword><keyword><style  face="normal" font="default" size="100%">Drain current</style></keyword><keyword><style  face="normal" font="default" size="100%">Electronic design automation tools</style></keyword><keyword><style  face="normal" font="default" size="100%">Extraction</style></keyword><keyword><style  face="normal" font="default" size="100%">Extraction procedure</style></keyword><keyword><style  face="normal" font="default" size="100%">Field effect transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Gallium</style></keyword><keyword><style  face="normal" font="default" size="100%">Gallium indium zinc oxides</style></keyword><keyword><style  face="normal" font="default" size="100%">GIZO</style></keyword><keyword><style  face="normal" font="default" size="100%">Indium</style></keyword><keyword><style  face="normal" font="default" size="100%">Parameter extraction</style></keyword><keyword><style  face="normal" font="default" size="100%">Parameters extraction</style></keyword><keyword><style  face="normal" font="default" size="100%">Source and drain electrodes</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film circuits</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin films</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin-film transistor (TFTs)</style></keyword><keyword><style  face="normal" font="default" size="100%">Zinc</style></keyword><keyword><style  face="normal" font="default" size="100%">Zinc oxide</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84994316272&amp;doi=10.1016%2fj.sse.2016.09.011&amp;partnerID=40&amp;md5=e953f6036fe8af1e1d4ff5d2a5c909c8</style></url></web-urls></urls><publisher><style face="normal" font="default" size="100%">Elsevier Ltd</style></publisher><volume><style face="normal" font="default" size="100%">126</style></volume><pages><style face="normal" font="default" size="100%">81-86</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">An advanced compact and analytical drain current model for the amorphous gallium indium zinc oxide (GIZO) thin film transistors (TFTs) is proposed. Its output saturation behavior is improved by introducing a new asymptotic function. All model parameters were extracted using an adapted version of the Universal Method and Extraction Procedure (UMEM) applied for the first time for GIZO devices in a simple and direct form. We demonstrate the correct behavior of the model for negative VDS, a necessity for a complete compact model. In this way we prove the symmetry of source and drain electrodes and extend the range of applications to both signs of VDS. The model, in Verilog-A code, is implemented in Electronic Design Automation (EDA) tools, such as Smart Spice, and compared with measurements of TFTs. It describes accurately the experimental characteristics in the whole range of GIZO TFTs operation, making the model suitable for the design of circuits using these types of devices. © 2016 Elsevier Ltd</style></abstract><notes><style face="normal" font="default" size="100%">cited By 0</style></notes></record></records></xml>