Oxide TFTs on flexible substrates for designing and fabricating analog-to-digital converters

TitleOxide TFTs on flexible substrates for designing and fabricating analog-to-digital converters
Publication TypeJournal Article
Year of Publication2016
AuthorsCorreia A a, Goes J a, Barquinha P b
Secondary AuthorsCamarinha-Matos L.M., Falcao A.J. VNNS
JournalIFIP Advances in Information and Communication Technology
ISBN Number9783319311647
KeywordsADCs, Amorphous films, Amorphous oxide semiconductor (AOS), Analog to digital conversion, Analog to digital converters, Circuit integration, Digital devices, Embedded systems, Film preparation, Igzo tfts, Indium, Indium gallium zinc oxides, Low processing temperature, Oxide semiconductors, Processing, Semiconducting indium, Substrates, Thin film transistors, Thin films, Thin-film transistor (TFTs)

Thin-film transistors (TFTs) employing oxide semiconductors have recently emerged in electronics, offering excellent performance and stability, low processing temperature and large area processing, being indium-gallium-zinc oxide (IGZO) the most popular amorphous oxide semiconductor. In this work it is shown how IGZO TFTs can be integrated with multilayer high-κ dielectrics to obtain low operating voltages, both on glass and flexible PEN substrates. Then, the electrical properties extracted from these devices are used to design and simulate a 2nd-order Sigma-Delta (ΣΔ) analog-to-digital converter (ADC), showing superior performance (e.g. SNDR ≈ 57 dB, and DR ≈ 65 dB) over ADCs using competing thin-film technologies. © IFIP International Federation for Information Processing 2016.