<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Correia, A.a</style></author><author><style face="normal" font="default" size="100%">Goes, J.a</style></author><author><style face="normal" font="default" size="100%">Barquinha, P.b</style></author></authors><secondary-authors><author><style face="normal" font="default" size="100%">Camarinha-Matos L.M., Falcao A.J., Vafaei N., Najdi S.</style></author></secondary-authors></contributors><titles><title><style face="normal" font="default" size="100%">Oxide TFTs on flexible substrates for designing and fabricating analog-to-digital converters</style></title><secondary-title><style face="normal" font="default" size="100%">IFIP Advances in Information and Communication Technology</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">ADCs</style></keyword><keyword><style  face="normal" font="default" size="100%">Amorphous films</style></keyword><keyword><style  face="normal" font="default" size="100%">Amorphous oxide semiconductor (AOS)</style></keyword><keyword><style  face="normal" font="default" size="100%">Analog to digital conversion</style></keyword><keyword><style  face="normal" font="default" size="100%">Analog to digital converters</style></keyword><keyword><style  face="normal" font="default" size="100%">Circuit integration</style></keyword><keyword><style  face="normal" font="default" size="100%">Digital devices</style></keyword><keyword><style  face="normal" font="default" size="100%">Embedded systems</style></keyword><keyword><style  face="normal" font="default" size="100%">Film preparation</style></keyword><keyword><style  face="normal" font="default" size="100%">Igzo tfts</style></keyword><keyword><style  face="normal" font="default" size="100%">Indium</style></keyword><keyword><style  face="normal" font="default" size="100%">Indium gallium zinc oxides</style></keyword><keyword><style  face="normal" font="default" size="100%">Low processing temperature</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxide semiconductors</style></keyword><keyword><style  face="normal" font="default" size="100%">Processing</style></keyword><keyword><style  face="normal" font="default" size="100%">Semiconducting indium</style></keyword><keyword><style  face="normal" font="default" size="100%">Substrates</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin films</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin-film transistor (TFTs)</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84962073652&amp;doi=10.1007%2f978-3-319-31165-4_50&amp;partnerID=40&amp;md5=38e50e98f2d6ab7e5b30472bd56041a9</style></url></web-urls></urls><publisher><style face="normal" font="default" size="100%">Springer New York LLC</style></publisher><volume><style face="normal" font="default" size="100%">470</style></volume><pages><style face="normal" font="default" size="100%">533-541</style></pages><isbn><style face="normal" font="default" size="100%">9783319311647</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Thin-film transistors (TFTs) employing oxide semiconductors have recently emerged in electronics, offering excellent performance and stability, low processing temperature and large area processing, being indium-gallium-zinc oxide (IGZO) the most popular amorphous oxide semiconductor. In this work it is shown how IGZO TFTs can be integrated with multilayer high-κ dielectrics to obtain low operating voltages, both on glass and flexible PEN substrates. Then, the electrical properties extracted from these devices are used to design and simulate a 2nd-order Sigma-Delta (ΣΔ) analog-to-digital converter (ADC), showing superior performance (e.g. SNDR ≈ 57 dB, and DR ≈ 65 dB) over ADCs using competing thin-film technologies. © IFIP International Federation for Information Processing 2016.</style></abstract><notes><style face="normal" font="default" size="100%">cited By 0; Conference of 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2016 ; Conference Date: 11 April 2016 Through 13 April 2016; Conference Code:172549</style></notes></record></records></xml>