%0 Journal Article %J IFIP Advances in Information and Communication Technology %D 2016 %T Oxide TFTs on flexible substrates for designing and fabricating analog-to-digital converters %A Correia, A.a %A Goes, J.a %A Barquinha, P.b %E Camarinha-Matos L.M., Falcao A.J., Vafaei N., Najdi S. %I Springer New York LLC %K ADCs %K Amorphous films %K Amorphous oxide semiconductor (AOS) %K Analog to digital conversion %K Analog to digital converters %K Circuit integration %K Digital devices %K Embedded systems %K Film preparation %K Igzo tfts %K Indium %K Indium gallium zinc oxides %K Low processing temperature %K Oxide semiconductors %K Processing %K Semiconducting indium %K Substrates %K Thin film transistors %K Thin films %K Thin-film transistor (TFTs) %P 533-541 %R 10.1007/978-3-319-31165-4_50 %U https://www.scopus.com/inward/record.uri?eid=2-s2.0-84962073652&doi=10.1007%2f978-3-319-31165-4_50&partnerID=40&md5=38e50e98f2d6ab7e5b30472bd56041a9 %V 470 %X Thin-film transistors (TFTs) employing oxide semiconductors have recently emerged in electronics, offering excellent performance and stability, low processing temperature and large area processing, being indium-gallium-zinc oxide (IGZO) the most popular amorphous oxide semiconductor. In this work it is shown how IGZO TFTs can be integrated with multilayer high-κ dielectrics to obtain low operating voltages, both on glass and flexible PEN substrates. Then, the electrical properties extracted from these devices are used to design and simulate a 2nd-order Sigma-Delta (ΣΔ) analog-to-digital converter (ADC), showing superior performance (e.g. SNDR ≈ 57 dB, and DR ≈ 65 dB) over ADCs using competing thin-film technologies. © IFIP International Federation for Information Processing 2016. %Z cited By 0; Conference of 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2016 ; Conference Date: 11 April 2016 Through 13 April 2016; Conference Code:172549 %@ 9783319311647