A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors

TitleA compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors
Publication TypeJournal Article
Year of Publication2016
AuthorsMoldovan O a, Castro-Carranza A b, Cerdeira A c, Estrada M c, Barquinha P d, Martins R d, Fortunato E d, Miljakovic S e, Iñiguez B a
JournalSolid-State Electronics
Volume126
Pagination81-86
ISSN00381101
KeywordsAmorphous films, Compact model, Computer aided design, Drain current, Electronic design automation tools, Extraction, Extraction procedure, Field effect transistors, Gallium, Gallium indium zinc oxides, GIZO, Indium, Parameter extraction, Parameters extraction, Source and drain electrodes, Thin film circuits, Thin film transistors, Thin films, Thin-film transistor (TFTs), Zinc, Zinc oxide
Abstract

An advanced compact and analytical drain current model for the amorphous gallium indium zinc oxide (GIZO) thin film transistors (TFTs) is proposed. Its output saturation behavior is improved by introducing a new asymptotic function. All model parameters were extracted using an adapted version of the Universal Method and Extraction Procedure (UMEM) applied for the first time for GIZO devices in a simple and direct form. We demonstrate the correct behavior of the model for negative VDS, a necessity for a complete compact model. In this way we prove the symmetry of source and drain electrodes and extend the range of applications to both signs of VDS. The model, in Verilog-A code, is implemented in Electronic Design Automation (EDA) tools, such as Smart Spice, and compared with measurements of TFTs. It describes accurately the experimental characteristics in the whole range of GIZO TFTs operation, making the model suitable for the design of circuits using these types of devices. © 2016 Elsevier Ltd

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84994316272&doi=10.1016%2fj.sse.2016.09.011&partnerID=40&md5=e953f6036fe8af1e1d4ff5d2a5c909c8
DOI10.1016/j.sse.2016.09.011