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OFERTA FORMATIVA DCM - FCT/UNL

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Filters: Keyword is Gallium  [Clear All Filters]
2016
Moldovan O a, Castro-Carranza A b, Cerdeira A c, Estrada M c, Barquinha P d, Martins R d, Fortunato E d, Miljakovic S e, Iñiguez B a.  2016.  A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors. Solid-State Electronics. 126:81-86. Abstract
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Martins J a, Barquinha P a, Goes J b.  2016.  TCAD simulation of amorphous indium-gallium-zinc oxide thin-film transistors. IFIP Advances in Information and Communication Technology. 470:551-557. Abstract
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Niang KM a, Barquinha PMC b, Martins RFP b, Cobb B c, Powell MJ d, Flewitt AJ a.  2016.  A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress. Applied Physics Letters. 108 Abstract
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R&D - ID TEAMS

  • Materials for Electronics, Optoelectronics and Nanotechnologies (MEON)
  • Soft and Biofunctional Materials Group (SBMG)
  • Structural Materials (SM)
NOVA School of Science and Technology
Universidade NOVA de Lisboa
2025