TCAD simulation of amorphous indium-gallium-zinc oxide thin-film transistors

TitleTCAD simulation of amorphous indium-gallium-zinc oxide thin-film transistors
Publication TypeJournal Article
Year of Publication2016
AuthorsMartins J a, Barquinha P a, Goes J b
Secondary AuthorsCamarinha-Matos L.M., Falcao A.J. VNNS
JournalIFIP Advances in Information and Communication Technology
ISBN Number9783319311647
KeywordsAmorphous films, Amorphous semiconductors, Amorphous-indium gallium zinc oxides, DOS, Drain-induced barrier lowering, Electronic design automation, Embedded systems, Field effect transistors, Gallium, IGZO, Indium, Indium-gallium-zinc-oxide thin-film transistors (tfts) (IGZO), MOS devices, Physical characteristics, Reconfigurable hardware, TCAD simulation, Thin film transistors, Thin films, Threshold voltage, Threshold voltage modulations, Transfer characteristics, Zinc, Zinc oxide

Indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are simulated using TCAD software. Nonlinearities observed in fabricated devices are obtained through simulation and corresponding physical characteristics are further investigated. For small channel length (below 1 μm) TFTs’ simulations show short channel effects, namely drain-induced barrier lowering (DIBL), and effectively source-channel barrier is shown to decrease with drain bias. Simulations with increasing shallow donor-like states result in transfer characteristics presenting hump-like behavior as typically observed after gate bias stress. Additionally, dual-gate architecture is simulated, exhibiting threshold voltage modulation by the second gate biasing. © IFIP International Federation for Information Processing 2016.