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TCAD simulation of amorphous indium-gallium-zinc oxide thin-film transistors

Title	TCAD simulation of amorphous indium-gallium-zinc oxide thin-film transistors
Publication Type	Journal Article
Year of Publication	2016
Authors	Martins J a, Barquinha P a, Goes J b
Secondary Authors	Camarinha-Matos L.M., Falcao A.J. VNNS
Journal	IFIP Advances in Information and Communication Technology
Volume	470
Pagination	551-557
ISSN	18684238
ISBN Number	9783319311647
Keywords	Amorphous films, Amorphous semiconductors, Amorphous-indium gallium zinc oxides, DOS, Drain-induced barrier lowering, Electronic design automation, Embedded systems, Field effect transistors, Gallium, IGZO, Indium, Indium-gallium-zinc-oxide thin-film transistors (tfts) (IGZO), MOS devices, Physical characteristics, Reconfigurable hardware, TCAD simulation, Thin film transistors, Thin films, Threshold voltage, Threshold voltage modulations, Transfer characteristics, Zinc, Zinc oxide
Abstract	Indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are simulated using TCAD software. Nonlinearities observed in fabricated devices are obtained through simulation and corresponding physical characteristics are further investigated. For small channel length (below 1 μm) TFTs’ simulations show short channel effects, namely drain-induced barrier lowering (DIBL), and effectively source-channel barrier is shown to decrease with drain bias. Simulations with increasing shallow donor-like states result in transfer characteristics presenting hump-like behavior as typically observed after gate bias stress. Additionally, dual-gate architecture is simulated, exhibiting threshold voltage modulation by the second gate biasing. © IFIP International Federation for Information Processing 2016.
URL	https://www.scopus.com/inward/record.uri?eid=2-s2.0-84962074297&doi=10.1007%2f978-3-319-31165-4_52&partnerID=40&md5=0f012d56a09636714762e7bddc928ccb
DOI	10.1007/978-3-319-31165-4_52