<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Niang, K.M.a</style></author><author><style face="normal" font="default" size="100%">Barquinha, P.M.C.b</style></author><author><style face="normal" font="default" size="100%">Martins, R.F.P.b</style></author><author><style face="normal" font="default" size="100%">Cobb, B.c</style></author><author><style face="normal" font="default" size="100%">Powell, M.J.d</style></author><author><style face="normal" font="default" size="100%">Flewitt, A.J.a</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Amorphous films</style></keyword><keyword><style  face="normal" font="default" size="100%">Amorphous indium gallium zinc oxides (a igzo)</style></keyword><keyword><style  face="normal" font="default" size="100%">Amorphous semiconductors</style></keyword><keyword><style  face="normal" font="default" size="100%">Amorphous-indium gallium zinc oxides</style></keyword><keyword><style  face="normal" font="default" size="100%">Bias voltage</style></keyword><keyword><style  face="normal" font="default" size="100%">Computer circuits</style></keyword><keyword><style  face="normal" font="default" size="100%">Defects</style></keyword><keyword><style  face="normal" font="default" size="100%">Escape frequencies</style></keyword><keyword><style  face="normal" font="default" size="100%">Gallium</style></keyword><keyword><style  face="normal" font="default" size="100%">Indium</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxygen vacancies</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxygen vacancy defects</style></keyword><keyword><style  face="normal" font="default" size="100%">Positive gate bias</style></keyword><keyword><style  face="normal" font="default" size="100%">Reconfigurable hardware</style></keyword><keyword><style  face="normal" font="default" size="100%">Semiconducting indium compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">Temperature distribution</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin films</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin-film transistor (TFTs)</style></keyword><keyword><style  face="normal" font="default" size="100%">Threshold voltage</style></keyword><keyword><style  face="normal" font="default" size="100%">Threshold voltage shifts</style></keyword><keyword><style  face="normal" font="default" size="100%">Time and temperature dependence</style></keyword><keyword><style  face="normal" font="default" size="100%">Vacancies</style></keyword><keyword><style  face="normal" font="default" size="100%">Zinc</style></keyword><keyword><style  face="normal" font="default" size="100%">Zinc oxide</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84960156514&amp;doi=10.1063%2f1.4943249&amp;partnerID=40&amp;md5=3c7eaf3de8b8645f9c7c4e542302bf40</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">9</style></number><publisher><style face="normal" font="default" size="100%">American Institute of Physics Inc.</style></publisher><volume><style face="normal" font="default" size="100%">108</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 107 s-1. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys. 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed. © 2016 AIP Publishing LLC.</style></abstract><notes><style face="normal" font="default" size="100%">cited By 2</style></notes></record></records></xml>