<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Jiang, G.a b c</style></author><author><style face="normal" font="default" size="100%">Liu, A.a b c</style></author><author><style face="normal" font="default" size="100%">Liu, G.a b c</style></author><author><style face="normal" font="default" size="100%">Zhu, C.a b c</style></author><author><style face="normal" font="default" size="100%">Meng, Y.a b c</style></author><author><style face="normal" font="default" size="100%">Shin, B.d</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.e</style></author><author><style face="normal" font="default" size="100%">Martins, R.e</style></author><author><style face="normal" font="default" size="100%">Shan, F.a b c</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Annealing temperatures</style></keyword><keyword><style  face="normal" font="default" size="100%">Atomic force microscopy</style></keyword><keyword><style  face="normal" font="default" size="100%">Dielectric films</style></keyword><keyword><style  face="normal" font="default" size="100%">Dielectric materials</style></keyword><keyword><style  face="normal" font="default" size="100%">Electrical measurement</style></keyword><keyword><style  face="normal" font="default" size="100%">Gate dielectrics</style></keyword><keyword><style  face="normal" font="default" size="100%">High dielectric constants</style></keyword><keyword><style  face="normal" font="default" size="100%">High-k dielectric</style></keyword><keyword><style  face="normal" font="default" size="100%">Insulating properties</style></keyword><keyword><style  face="normal" font="default" size="100%">Low-power consumption</style></keyword><keyword><style  face="normal" font="default" size="100%">Magnesia</style></keyword><keyword><style  face="normal" font="default" size="100%">Metal oxide thin films</style></keyword><keyword><style  face="normal" font="default" size="100%">Metals</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxide films</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxide thin-film transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Thermogravimetric analysis</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film circuits</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin films</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin-film transistor (TFTs)</style></keyword><keyword><style  face="normal" font="default" size="100%">X ray diffraction</style></keyword><keyword><style  face="normal" font="default" size="100%">X ray photoelectron spectroscopy</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84994337318&amp;doi=10.1063%2f1.4966897&amp;partnerID=40&amp;md5=e8b7237a1af559eac22f2c2ed29233b5</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">18</style></number><publisher><style face="normal" font="default" size="100%">American Institute of Physics Inc.</style></publisher><volume><style face="normal" font="default" size="100%">109</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Solution-processed metal-oxide thin films with high dielectric constants (k) have been extensively studied for low-cost and high-performance thin-film transistors (TFTs). In this report, MgO dielectric films were fabricated using the spin-coating method. The MgO dielectric films annealed at various temperatures (300, 400, 500, and 600 °C) were characterized by using thermogravimetric analysis, optical spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and atomic-force microscopy. The electrical measurements indicate that the insulating properties of MgO thin films are improved with an increase in annealing temperature. In order to clarify the potential application of MgO thin films as gate dielectrics in TFTs, solution-derived In2O3 channel layers were separately fabricated on various MgO dielectric layers. The optimized In2O3/MgO TFT exhibited an electron mobility of 5.48 cm2/V s, an on/off current ratio of 107, and a subthreshold swing of 0.33 V/dec at a low operation voltage of 6 V. This work represents a great step toward the development of portable and low-power consumption electronics. © 2016 Author(s).</style></abstract><notes><style face="normal" font="default" size="100%">cited By 0</style></notes></record></records></xml>