<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Deuermeier, J.a b</style></author><author><style face="normal" font="default" size="100%">Wardenga, H.F.b</style></author><author><style face="normal" font="default" size="100%">Morasch, J.b</style></author><author><style face="normal" font="default" size="100%">Siol, S.b c</style></author><author><style face="normal" font="default" size="100%">Nandy, S.a</style></author><author><style face="normal" font="default" size="100%">Calmeiro, T.a</style></author><author><style face="normal" font="default" size="100%">Martins, R.a</style></author><author><style face="normal" font="default" size="100%">Klein, A.b</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.a</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Highly conductive grain boundaries in copper oxide thin films</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Applied Physics</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Bottom-up analysis</style></keyword><keyword><style  face="normal" font="default" size="100%">Conductive films</style></keyword><keyword><style  face="normal" font="default" size="100%">Copper</style></keyword><keyword><style  face="normal" font="default" size="100%">Copper oxide thin films</style></keyword><keyword><style  face="normal" font="default" size="100%">Copper oxides</style></keyword><keyword><style  face="normal" font="default" size="100%">Device fabrications</style></keyword><keyword><style  face="normal" font="default" size="100%">Enhanced conductivity</style></keyword><keyword><style  face="normal" font="default" size="100%">Field effect transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Grain boundaries</style></keyword><keyword><style  face="normal" font="default" size="100%">Interfaces (materials)</style></keyword><keyword><style  face="normal" font="default" size="100%">Moderate temperature</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxide films</style></keyword><keyword><style  face="normal" font="default" size="100%">Polycrystalline thin film</style></keyword><keyword><style  face="normal" font="default" size="100%">Situ conductance measurements</style></keyword><keyword><style  face="normal" font="default" size="100%">Substrate interface</style></keyword><keyword><style  face="normal" font="default" size="100%">Thick films</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin films</style></keyword><keyword><style  face="normal" font="default" size="100%">X ray photoelectron spectroscopy</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84975528044&amp;doi=10.1063%2f1.4954002&amp;partnerID=40&amp;md5=dd6d28c9955d83ec6c6f1c07d5b91471</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">23</style></number><publisher><style face="normal" font="default" size="100%">American Institute of Physics Inc.</style></publisher><volume><style face="normal" font="default" size="100%">119</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu2O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu2O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu2O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films. © 2016 Author(s).</style></abstract><notes><style face="normal" font="default" size="100%">cited By 0</style></notes></record></records></xml>