<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Jin, J.W.a</style></author><author><style face="normal" font="default" size="100%">Nathan, A.b</style></author><author><style face="normal" font="default" size="100%">Barquinha, P.c</style></author><author><style face="normal" font="default" size="100%">Pereira, L.c</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.c</style></author><author><style face="normal" font="default" size="100%">Martins, R.c</style></author><author><style face="normal" font="default" size="100%">Cobb, B.d</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress</style></title><secondary-title><style face="normal" font="default" size="100%">AIP Advances</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Anomalous behavior</style></keyword><keyword><style  face="normal" font="default" size="100%">Charge migration</style></keyword><keyword><style  face="normal" font="default" size="100%">Charge trapping/detrapping</style></keyword><keyword><style  face="normal" font="default" size="100%">Dielectric materials</style></keyword><keyword><style  face="normal" font="default" size="100%">Electron-donating</style></keyword><keyword><style  face="normal" font="default" size="100%">Gate dielectrics</style></keyword><keyword><style  face="normal" font="default" size="100%">Instantaneous polarization</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxide semiconductor thin film transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Oxide semiconductors</style></keyword><keyword><style  face="normal" font="default" size="100%">Positive gate bias</style></keyword><keyword><style  face="normal" font="default" size="100%">Reconfigurable hardware</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Threshold voltage</style></keyword><keyword><style  face="normal" font="default" size="100%">Trapping/detrapping</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84984677284&amp;doi=10.1063%2f1.4962151&amp;partnerID=40&amp;md5=e53f3bab39bae89a62f6786075b9a766</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">8</style></number><publisher><style face="normal" font="default" size="100%">American Institute of Physics Inc.</style></publisher><volume><style face="normal" font="default" size="100%">6</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Oxide semiconductor thin-film transistors can show anomalous behavior under bias stress. Two types of anomalies are discussed in this paper. The first is the shift in threshold voltage (VTH) in a direction opposite to the applied bias stress, and highly dependent on gate dielectric material. We attribute this to charge trapping/detrapping and charge migration within the gate dielectric. We emphasize the fundamental difference between trapping/detrapping events occurring at the semiconductor/dielectric interface and those occurring at gate/dielectric interface, and show that charge migration is essential to explain the first anomaly. We model charge migration in terms of the non-instantaneous polarization density. The second type of anomaly is negative VTH shift under high positive bias stress, with logarithmic evolution in time. This can be argued as electron-donating reactions involving H2O molecules or derived species, with a reaction rate exponentially accelerated by positive gate bias and exponentially decreased by the number of reactions already occurred. © 2016 Author(s).</style></abstract><notes><style face="normal" font="default" size="100%">cited By 0</style></notes></record></records></xml>