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B
Bahubalindruni PG a, Tavares VG b, Borme J c, De Oliveira PG b, Martins R a, Fortunato E a, Barquinha P a.  2016.  InGaZnO thin-film-transistor-based four-quadrant high-gain analog multiplier on glass. IEEE Electron Device Letters. 37:419-421. Abstract
Bianchi C, Ferreira LM, Loureiro J, Rodrigues A, Duarte P, Baptista AC, Ferreira IM.  2016.  Vanadium Pentoxide Alloyed with Graphite for Thin-Film Thermal Sensors. Journal of Electronic Materials. 45:1987-1991. Abstract
C
Carlos E, Branquinho R, Kiazadeh A, Barquinha P, Martins R, Fortunato E.  2016.  UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors. ACS Applied Materials and Interfaces. 8:31100-31108. Abstract
Correia A a, Goes J a, Barquinha P b.  2016.  Oxide TFTs on flexible substrates for designing and fabricating analog-to-digital converters. IFIP Advances in Information and Communication Technology. 470:533-541. Abstract
D
b Deuermeier J a, Wardenga HF b, Morasch J b, c Siol S b, Nandy S a, Calmeiro T a, Martins R a, Klein A b, Fortunato E a.  2016.  Highly conductive grain boundaries in copper oxide thin films. Journal of Applied Physics. 119 Abstract
G
Grey P, Pereira L, Pereira S, Barquinha P, Cunha I, Martins R, Fortunato E.  2016.  Electrochemical transistor based on tungsten oxide with optoelectronic properties. IFIP Advances in Information and Communication Technology. 470:542-550. Abstract
J
b c Jiang G a, b c Liu A a, b c Liu G a, b c Zhu C a, b c Meng Y a, Shin B d, Fortunato E e, Martins R e, b c Shan F a.  2016.  Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors. Applied Physics Letters. 109 Abstract
K
Kardarian K a, Nunes D a, b Maria Sberna P a, Ginsburg A c, Keller DA c, Vaz Pinto J a, Deuermeier J a, Anderson AY c, Zaban A c, Martins R a et al..  2016.  Effect of Mg doping on Cu2O thin films and their behavior on the TiO2/Cu2O heterojunction solar cells. Solar Energy Materials and Solar Cells. 147:27-36. Abstract
Kumar M a, Singh R a, Nandy S b, Ghosh A a, Rath S c, Som T a.  2016.  Tunable optoelectronic properties of pulsed dc sputter-deposited ZnO:Al thin films: Role of growth angle. Journal of Applied Physics. 120 Abstract
L
b c Liu A a, b c Liu G a, b c Zhu H a, Shin B d, Fortunato E e, Martins R e, b c Shan F a.  2016.  Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors. Journal of Materials Chemistry C. 4:4478-4484. Abstract
b c Liu A a, b c Liu G a, b c Zhu H a, Shin B d, Fortunato E e, Martins R e, b c Shan F a.  2016.  Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric. Applied Physics Letters. 108 Abstract
Lyubchyk A, Vicente A, Alves PU, Catela B, Soule B, Mateus T, Mendes MJ, Águas H, Fortunato E, Martins R.  2016.  Influence of post-deposition annealing on electrical and optical properties of ZnO-based TCOs deposited at room temperature. Physica Status Solidi (A) Applications and Materials Science. 213:2317-2328. Abstract
M
Martins GV, Marques AC, Fortunato E, Sales MGF.  2016.  8-hydroxy-2′-deoxyguanosine (8-OHdG) biomarker detection down to picoMolar level on a plastic antibody film. Biosensors and Bioelectronics. 86:225-234. Abstract
Martins J a, Barquinha P a, Goes J b.  2016.  TCAD simulation of amorphous indium-gallium-zinc oxide thin-film transistors. IFIP Advances in Information and Communication Technology. 470:551-557. Abstract
Mendes MJ, Araújo A, Vicente A, Águas H, Ferreira I, Fortunato E, Martins R.  2016.  Design of optimized wave-optical spheroidal nanostructures for photonic-enhanced solar cells. Nano Energy. 26:286-296. Abstract
Moldovan O a, Castro-Carranza A b, Cerdeira A c, Estrada M c, Barquinha P d, Martins R d, Fortunato E d, Miljakovic S e, Iñiguez B a.  2016.  A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors. Solid-State Electronics. 126:81-86. Abstract
N
Niang KM a, Barquinha PMC b, Martins RFP b, Cobb B c, Powell MJ d, Flewitt AJ a.  2016.  A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress. Applied Physics Letters. 108 Abstract
S
b c Shan F a, b c Liu A a, Zhu H c, Kong W a, Liu J c, Shin B d, Fortunato E e, Martins R e, b c Liu G a.  2016.  High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric. Journal of Materials Chemistry C. 4:9438-9444. Abstract
Z
b c Zhu C a, b c Liu A a, b c Liu G a, b c Jiang G a, b c Meng Y a, Fortunato E d, Martins R d, b c Shan F a.  2016.  Low-temperature, nontoxic water-induced high-: K zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors. Journal of Materials Chemistry C. 4:10715-10721. Abstract