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B
Bahubalindruni PG a
,
Tavares V c
,
Barquinha P b
,
Martins R b
,
Fortunato E b
. 2016.
Basic analog and digital circuits with a-IGZO TFTs
.
2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016.
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E
Grey P
,
Pereira L
,
Pereira S
,
Barquinha P
,
Cunha I
,
Martins R
,
Fortunato E
. 2016.
Electrochemical transistor based on tungsten oxide with optoelectronic properties
.
IFIP Advances in Information and Communication Technology. 470:542-550.
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H
c Bahubalindruni PG a
,
Goes J b
,
Barquinha P c
. 2016.
A high-gain, high-speed parametric residue amplifier for SAR-assisted pipeline ADCs
.
2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016.
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b c Liu A a
,
b c Liu G a
,
b c Zhu H a
,
Shin B d
,
Fortunato E e
,
Martins R e
,
b c Shan F a
. 2016.
Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric
.
Applied Physics Letters. 108
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I
Bahubalindruni PG a
,
Kiazadeh A b
,
Sacchetti A b
,
Martins J b
,
Rovisco A b
,
Tavares VG c
,
Martins R b
,
Fortunato E b
,
Barquinha P b
. 2016.
Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance
.
Journal of Display Technology. 12:515-518.
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Bahubalindrun P a
,
Tavares V b
,
Barquinha P a
,
De Oliveira PG b
,
Martins R a
,
Fortunato E a
. 2016.
InGaZnO TFT behavioral model for IC design
.
Analog Integrated Circuits and Signal Processing. 87:73-80.
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Bahubalindruni PG a
,
Tavares VG b
,
Borme J c
,
De Oliveira PG b
,
Martins R a
,
Fortunato E a
,
Barquinha P a
. 2016.
InGaZnO thin-film-transistor-based four-quadrant high-gain analog multiplier on glass
.
IEEE Electron Device Letters. 37:419-421.
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Jin JW a
,
Nathan A b
,
Barquinha P c
,
Pereira L c
,
Fortunato E c
,
Martins R c
,
Cobb B d
. 2016.
Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress
.
AIP Advances. 6
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N
c Bahubalindruni PG a
,
Tavares VG b
,
Fortunato E a
,
Martins R a
,
Barquinha P a
. 2016.
Novel linear analog-adder using a-IGZO TFTs
.
Proceedings - IEEE International Symposium on Circuits and Systems. 2016-July:2098-2101.
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T
Martins J a
,
Barquinha P a
,
Goes J b
. 2016.
TCAD simulation of amorphous indium-gallium-zinc oxide thin-film transistors
.
IFIP Advances in Information and Communication Technology. 470:551-557.
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Niang KM a
,
Barquinha PMC b
,
Martins RFP b
,
Cobb B c
,
Powell MJ d
,
Flewitt AJ a
. 2016.
A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress
.
Applied Physics Letters. 108
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