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B
Bahubalindruni PG a, Kiazadeh A b, Sacchetti A b, Martins J b, Rovisco A b, Tavares VG c, Martins R b, Fortunato E b, Barquinha P b.  2016.  Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance. Journal of Display Technology. 12:515-518. Abstract
Bahubalindruni PG a, Tavares V c, Barquinha P b, Martins R b, Fortunato E b.  2016.  Basic analog and digital circuits with a-IGZO TFTs. 2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2016. Abstract
Besleaga C a, Stan GE a, Pintilie I a, Barquinha P b, Fortunato E b, Martins R b.  2016.  Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor. Applied Surface Science. 379:270-276. Abstract
C
Cramer T a, Sacchetti A a, Lobato MT b, Barquinha P b, Fischer V c, Benwadih M c, Bablet J c, Fortunato E b, Martins R b, Fraboni B a.  2016.  Radiation-Tolerant Flexible Large-Area Electronics Based on Oxide Semiconductors. Advanced Electronic Materials. 2 Abstract
O
Oliveira M a, Liang D a, Almeida J a, Vistas CR a, Gonçalves F a, Martins R b.  2016.  A path to renewable Mg reduction from MgO by a continuous-wave Cr:Nd:YAG ceramic solar laser. Solar Energy Materials and Solar Cells. 155:430-435. Abstract
Z
Zubizarreta C a, G-Berasategui E a, Ciarsolo I a, Barriga J a, Gaspar D b, Martins R b, Fortunato E b.  2016.  The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering. Applied Surface Science. 380:218-222. Abstract