<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Besleaga, C.a</style></author><author><style face="normal" font="default" size="100%">Stan, G.E.a</style></author><author><style face="normal" font="default" size="100%">Pintilie, I.a</style></author><author><style face="normal" font="default" size="100%">Barquinha, P.b</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.b</style></author><author><style face="normal" font="default" size="100%">Martins, R.b</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Surface Science</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84964546688&amp;doi=10.1016%2fj.apsusc.2016.04.083&amp;partnerID=40&amp;md5=ba9dc9da25fb02efd6c07c7d1d2e3025</style></url></web-urls></urls><publisher><style face="normal" font="default" size="100%">Elsevier</style></publisher><volume><style face="normal" font="default" size="100%">379</style></volume><pages><style face="normal" font="default" size="100%">270-276</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">The degradation of thin-film transistors (TFTs) caused by the self-heating effect constitutes a problem to be solved for the next generation of displays. Aluminum nitride (AlN) is a viable alternative for gate dielectric of TFTs due to its good thermal conductivity, matching coefficient of thermal expansion to indium-gallium-zinc-oxide, and excellent stability at high temperatures. Here, AlN thin films of different thicknesses were fabricated by a low temperature reactive radio-frequency magnetron sputtering process, using a low cost, metallic Al target. Their electrical properties have been thoroughly assessed. Furthermore, the 200 nm and 500 nm thick AlN layers have been integrated as gate-dielectric in transparent TFTs with indium-gallium-zinc-oxide as channel semiconductor. Our study emphasizes the potential of AlN thin films for transparent electronics, whilst the functionality of the fabricated field-effect transistors is explored and discussed. © 2016 Elsevier B.V. All rights reserved.</style></abstract><notes><style face="normal" font="default" size="100%">cited By 0</style></notes></record></records></xml>