Radiation-Tolerant Flexible Large-Area Electronics Based on Oxide Semiconductors

TitleRadiation-Tolerant Flexible Large-Area Electronics Based on Oxide Semiconductors
Publication TypeJournal Article
Year of Publication2016
AuthorsCramer T a, Sacchetti A a, Lobato MT b, Barquinha P b, Fischer V c, Benwadih M c, Bablet J c, Fortunato E b, Martins R b, Fraboni B a
JournalAdvanced Electronic Materials

Large-area electronics for applications in environments with radioactive contamination or medical X-ray detectors require materials and devices resistant to continuous ionizing radiation exposure. Here the superior X-ray radiation hardness of oxide thin film transistors (TFTs) based on gallium-indium-zinc oxide is demonstrated, when compared to organic ones. In the experiments both TFTs are subjected to X-ray radiation and their performances are monitored as a function of total ionizing dose. Flexible oxide TFTs maintain a constant mobility of 10 cm2 V−1 s−1 even after exposure to doses of 410 krad(SiO2), whereas organic TFTs lose 55% of their transport performance. The exceptional resistance of oxide semiconductors ionization damage is attributed to their intrinsic properties such as independence of transport on long-range order and large heat of formation. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim