<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Cramer, T.a</style></author><author><style face="normal" font="default" size="100%">Sacchetti, A.a</style></author><author><style face="normal" font="default" size="100%">Lobato, M.T.b</style></author><author><style face="normal" font="default" size="100%">Barquinha, P.b</style></author><author><style face="normal" font="default" size="100%">Fischer, V.c</style></author><author><style face="normal" font="default" size="100%">Benwadih, M.c</style></author><author><style face="normal" font="default" size="100%">Bablet, J.c</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.b</style></author><author><style face="normal" font="default" size="100%">Martins, R.b</style></author><author><style face="normal" font="default" size="100%">Fraboni, B.a</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Radiation-Tolerant Flexible Large-Area Electronics Based on Oxide Semiconductors</style></title><secondary-title><style face="normal" font="default" size="100%">Advanced Electronic Materials</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84978384040&amp;doi=10.1002%2faelm.201500489&amp;partnerID=40&amp;md5=233c450344ebba1bfb57719f5cad4278</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">7</style></number><publisher><style face="normal" font="default" size="100%">Blackwell Publishing Ltd</style></publisher><volume><style face="normal" font="default" size="100%">2</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Large-area electronics for applications in environments with radioactive contamination or medical X-ray detectors require materials and devices resistant to continuous ionizing radiation exposure. Here the superior X-ray radiation hardness of oxide thin film transistors (TFTs) based on gallium-indium-zinc oxide is demonstrated, when compared to organic ones. In the experiments both TFTs are subjected to X-ray radiation and their performances are monitored as a function of total ionizing dose. Flexible oxide TFTs maintain a constant mobility of 10 cm2 V−1 s−1 even after exposure to doses of 410 krad(SiO2), whereas organic TFTs lose 55% of their transport performance. The exceptional resistance of oxide semiconductors ionization damage is attributed to their intrinsic properties such as independence of transport on long-range order and large heat of formation. © 2016 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim</style></abstract><notes><style face="normal" font="default" size="100%">cited By 0</style></notes></record></records></xml>