@article {Cramer2016,
	title = {Radiation-Tolerant Flexible Large-Area Electronics Based on Oxide Semiconductors},
	journal = {Advanced Electronic Materials},
	volume = {2},
	number = {7},
	year = {2016},
	note = {cited By 0},
	publisher = {Blackwell Publishing Ltd},
	abstract = {Large-area electronics for applications in environments with radioactive contamination or medical X-ray detectors require materials and devices resistant to continuous ionizing radiation exposure. Here the superior X-ray radiation hardness of oxide thin film transistors (TFTs) based on gallium-indium-zinc oxide is demonstrated, when compared to organic ones. In the experiments both TFTs are subjected to X-ray radiation and their performances are monitored as a function of total ionizing dose. Flexible oxide TFTs maintain a constant mobility of 10 cm2 V-1 s-1 even after exposure to doses of 410 krad(SiO2), whereas organic TFTs lose 55\% of their transport performance. The exceptional resistance of oxide semiconductors ionization damage is attributed to their intrinsic properties such as independence of transport on long-range order and large heat of formation. {\textcopyright} 2016 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
	issn = {2199160X},
	doi = {10.1002/aelm.201500489},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84978384040\&doi=10.1002\%2faelm.201500489\&partnerID=40\&md5=233c450344ebba1bfb57719f5cad4278},
	author = {Cramer, T.a and Sacchetti, A.a and Lobato, M.T.b and Barquinha, P.b and Fischer, V.c and Benwadih, M.c and Bablet, J.c and Fortunato, E.b and Martins, R.b and Fraboni, B.a}
}
