@article {Besleaga2016270, title = {Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor}, journal = {Applied Surface Science}, volume = {379}, year = {2016}, note = {cited By 0}, pages = {270-276}, publisher = {Elsevier}, abstract = {The degradation of thin-film transistors (TFTs) caused by the self-heating effect constitutes a problem to be solved for the next generation of displays. Aluminum nitride (AlN) is a viable alternative for gate dielectric of TFTs due to its good thermal conductivity, matching coefficient of thermal expansion to indium-gallium-zinc-oxide, and excellent stability at high temperatures. Here, AlN thin films of different thicknesses were fabricated by a low temperature reactive radio-frequency magnetron sputtering process, using a low cost, metallic Al target. Their electrical properties have been thoroughly assessed. Furthermore, the 200 nm and 500 nm thick AlN layers have been integrated as gate-dielectric in transparent TFTs with indium-gallium-zinc-oxide as channel semiconductor. Our study emphasizes the potential of AlN thin films for transparent electronics, whilst the functionality of the fabricated field-effect transistors is explored and discussed. {\textcopyright} 2016 Elsevier B.V. All rights reserved.}, issn = {01694332}, doi = {10.1016/j.apsusc.2016.04.083}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84964546688\&doi=10.1016\%2fj.apsusc.2016.04.083\&partnerID=40\&md5=ba9dc9da25fb02efd6c07c7d1d2e3025}, author = {Besleaga, C.a and Stan, G.E.a and Pintilie, I.a and Barquinha, P.b and Fortunato, E.b and Martins, R.b} }