@article {Besleaga2016270,
	title = {Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor},
	journal = {Applied Surface Science},
	volume = {379},
	year = {2016},
	note = {cited By 0},
	pages = {270-276},
	publisher = {Elsevier},
	abstract = {The degradation of thin-film transistors (TFTs) caused by the self-heating effect constitutes a problem to be solved for the next generation of displays. Aluminum nitride (AlN) is a viable alternative for gate dielectric of TFTs due to its good thermal conductivity, matching coefficient of thermal expansion to indium-gallium-zinc-oxide, and excellent stability at high temperatures. Here, AlN thin films of different thicknesses were fabricated by a low temperature reactive radio-frequency magnetron sputtering process, using a low cost, metallic Al target. Their electrical properties have been thoroughly assessed. Furthermore, the 200 nm and 500 nm thick AlN layers have been integrated as gate-dielectric in transparent TFTs with indium-gallium-zinc-oxide as channel semiconductor. Our study emphasizes the potential of AlN thin films for transparent electronics, whilst the functionality of the fabricated field-effect transistors is explored and discussed. {\textcopyright} 2016 Elsevier B.V. All rights reserved.},
	issn = {01694332},
	doi = {10.1016/j.apsusc.2016.04.083},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84964546688\&doi=10.1016\%2fj.apsusc.2016.04.083\&partnerID=40\&md5=ba9dc9da25fb02efd6c07c7d1d2e3025},
	author = {Besleaga, C.a and Stan, G.E.a and Pintilie, I.a and Barquinha, P.b and Fortunato, E.b and Martins, R.b}
}
