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Field effect transistors
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B
Bahubalindrun P a
,
Tavares V b
,
Barquinha P a
,
De Oliveira PG b
,
Martins R a
,
Fortunato E a
. 2016.
InGaZnO TFT behavioral model for IC design
.
Analog Integrated Circuits and Signal Processing. 87:73-80.
Abstract
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Bahubalindruni PG a
,
Kiazadeh A b
,
Sacchetti A b
,
Martins J b
,
Rovisco A b
,
Tavares VG c
,
Martins R b
,
Fortunato E b
,
Barquinha P b
. 2016.
Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance
.
Journal of Display Technology. 12:515-518.
Abstract
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D
b Deuermeier J a
,
Wardenga HF b
,
Morasch J b
,
c Siol S b
,
Nandy S a
,
Calmeiro T a
,
Martins R a
,
Klein A b
,
Fortunato E a
. 2016.
Highly conductive grain boundaries in copper oxide thin films
.
Journal of Applied Physics. 119
Abstract
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L
b c Liu A a
,
b c Liu G a
,
b c Zhu H a
,
Shin B d
,
Fortunato E e
,
Martins R e
,
b c Shan F a
. 2016.
Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric
.
Applied Physics Letters. 108
Abstract
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Lorenz M
,
Ramachandra Rao MS
,
Venkatesan T
,
Fortunato E
,
Barquinha P
,
Branquinho R
,
Salgueiro D
,
Martins R
,
Carlos E
,
Liu A
et al.
. 2016.
The 2016 oxide electronic materials and oxide interfaces roadmap
.
Journal of Physics D: Applied Physics. 49
Abstract
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M
Martins J a
,
Barquinha P a
,
Goes J b
. 2016.
TCAD simulation of amorphous indium-gallium-zinc oxide thin-film transistors
.
IFIP Advances in Information and Communication Technology. 470:551-557.
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Moldovan O a
,
Castro-Carranza A b
,
Cerdeira A c
,
Estrada M c
,
Barquinha P d
,
Martins R d
,
Fortunato E d
,
Miljakovic S e
,
Iñiguez B a
. 2016.
A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors
.
Solid-State Electronics. 126:81-86.
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Z
b c Zhu C a
,
b c Liu A a
,
b c Liu G a
,
b c Jiang G a
,
b c Meng Y a
,
Fortunato E d
,
Martins R d
,
b c Shan F a
. 2016.
Low-temperature, nontoxic water-induced high-: K zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors
.
Journal of Materials Chemistry C. 4:10715-10721.
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Materials for Electronics, Optoelectronics and Nanotechnologies (MEON)
Soft and Biofunctional Materials Group (SBMG)
Structural Materials (SM)