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B
Bahubalindruni PG a
,
Kiazadeh A b
,
Sacchetti A b
,
Martins J b
,
Rovisco A b
,
Tavares VG c
,
Martins R b
,
Fortunato E b
,
Barquinha P b
. 2016.
Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance
.
Journal of Display Technology. 12:515-518.
Abstract
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K
Kardarian K a
,
Nunes D a
,
b Maria Sberna P a
,
Ginsburg A c
,
Keller DA c
,
Vaz Pinto J a
,
Deuermeier J a
,
Anderson AY c
,
Zaban A c
,
Martins R a
et al.
. 2016.
Effect of Mg doping on Cu2O thin films and their behavior on the TiO2/Cu2O heterojunction solar cells
.
Solar Energy Materials and Solar Cells. 147:27-36.
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L
b c Liu A a
,
b c Liu G a
,
b c Zhu H a
,
Shin B d
,
Fortunato E e
,
Martins R e
,
b c Shan F a
. 2016.
Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric
.
Applied Physics Letters. 108
Abstract
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M
Martins J a
,
Barquinha P a
,
Goes J b
. 2016.
TCAD simulation of amorphous indium-gallium-zinc oxide thin-film transistors
.
IFIP Advances in Information and Communication Technology. 470:551-557.
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S
b c Shan F a
,
b c Liu A a
,
Zhu H c
,
Kong W a
,
Liu J c
,
Shin B d
,
Fortunato E e
,
Martins R e
,
b c Liu G a
. 2016.
High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric
.
Journal of Materials Chemistry C. 4:9438-9444.
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Z
b c Zhu C a
,
b c Liu A a
,
b c Liu G a
,
b c Jiang G a
,
b c Meng Y a
,
Fortunato E d
,
Martins R d
,
b c Shan F a
. 2016.
Low-temperature, nontoxic water-induced high-: K zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors
.
Journal of Materials Chemistry C. 4:10715-10721.
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Materials for Electronics, Optoelectronics and Nanotechnologies (MEON)
Soft and Biofunctional Materials Group (SBMG)
Structural Materials (SM)