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Niang KM a
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Barquinha PMC b
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Martins RFP b
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Cobb B c
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Powell MJ d
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Flewitt AJ a
. 2016.
A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress
.
Applied Physics Letters. 108
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Materials for Electronics, Optoelectronics and Nanotechnologies (MEON)
Soft and Biofunctional Materials Group (SBMG)
Structural Materials (SM)