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OFERTA FORMATIVA DCM - FCT/UNL

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Journal Article
Besleaga C a, Stan GE a, Pintilie I a, Barquinha P b, Fortunato E b, Martins R b.  2016.  Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor. Applied Surface Science. 379:270-276. Abstract
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R&D - ID TEAMS

  • Advanced Functional Materials for Micro and Nanotechnologies (AFMMN)
  • Soft and Biofunctional Materials Group (SBMG)
  • Structural Materials (SM)
NOVA School of Science and Technology
Universidade NOVA de Lisboa
2023