Parthiban Shanmugam

Description

Parthiban Shanmugam received his PhD degree from Bharathidasan University,

Tiruchirappalli, Tamil Nadu, India in 2009. Post-Doc Researcher from June

2010 at CENIMAT.

Main scientific interests:

Preparation and characterization of solution processed oxide semiconductor

and transparent thin film transistor.

Main publications

1) S. Parthiban, K .Ramamurthi, E. Elangovan, R. Martins, E.

Fortunato, Spray deposited molybdenum doped indium oxide thin films with high near infra-red transparency and carrier mobility

Applied Physics Letters , 94 , 212101, 2009

2) S. Parthiban , E. Elangovan, K .Ramamurthi, R. Martins , E.

Fortunato , High near infra-red transparency and carrier mobility of Mo

doped In2O3 thin films for opto-electronics applications Jouranl of Applied Physics, 106, 063716, 2009