Parthiban Shanmugam received his PhD degree from Bharathidasan University,
Tiruchirappalli, Tamil Nadu, India in 2009. Post-Doc Researcher from June
2010 at CENIMAT.
Main scientific interests:
Preparation and characterization of solution processed oxide semiconductor
and transparent thin film transistor.
1) S. Parthiban, K .Ramamurthi, E. Elangovan, R. Martins, E.
Fortunato, Spray deposited molybdenum doped indium oxide thin films with high near infra-red transparency and carrier mobility
Applied Physics Letters , 94 , 212101, 2009
2) S. Parthiban , E. Elangovan, K .Ramamurthi, R. Martins , E.
Fortunato , High near infra-red transparency and carrier mobility of Mo
doped In2O3 thin films for opto-electronics applications Jouranl of Applied Physics, 106, 063716, 2009