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Maria Elias Lopes Pereira
AFMMN
Advanced Functional Materials for Micro and Nanotechnologies
PhD Student
1.14 11609
Clean Room 13768/13769
mel.pereira@campus.fct.unl.pt
Advanced Functional Materials for Micro and Nanotechnologies
PhD Student
1.14 11609
Clean Room 13768/13769
mel.pereira@campus.fct.unl.pt
Description
Academic Profile:
Maria Elias Pereira completed the Integrated Master in Micro and Nanotechnology Engineering in 2018 by Nova School of Science and Technology. Her master thesis, entitled “Characterization of direct X-ray Detectors based on Organic Semiconductor Thin Films” was carried out at the University of Bologna in a collaborative work with CENIMAT|i3N. She is attending the PhD in Nanotechnologies and Nanosciences at Cenimat|i3N at Nova School of Science and Technology since 2021/01/01 and her focus is on optoelectronic memristive devices based on oxide semiconductors for the next generation of information technology. She has extensive experience in clean-room processes and characterization techniques, and is participating in a project entitled “NeurOxide” which aims to achieve a full integration of memristive devices and thin-film transistors.
Main scientific interests: micro and nanofabrication; amorphous oxide semiconductors; low-temperature electronics; resistive switching devices; thin-film transistors; low-voltage designs; artificial synapses; flexible and transparent technology.
Main publications
Pereira, M. E.; Deuermeier, J.; Bahubalindruni, P. G.; Barquinha, P.; Martins, R.; Fortunato, E.; Kiazadeh, A. Memristive devices for neuromorphic applications based on amorphous oxide semiconductor nanoscale films. Poster presentation, 12th Advanced Doctoral Conference on Computing, Electrical and Industrial Systems, 2021.
Pereira, M. E.; Deuermeier, J.; Silva, C.; Bahubalindruni, P.G.; Barquinha, P.; Martins, R.; Fortunato, E.; Kiazadeh, A. AOS-based memristive devices towards TFT integration: Materials and challenges. Poster presentation, Materials Challenges for Memory, APL Materials, 2021.
Silva, C.; Martins, J.; Deuermeier, J.; Pereira, M. E.; Rovisco, A.; Barquinha, P.; Goes, J.; Martins, R.; Fortunato, E.; Kiazadeh, A. Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxide. Electron. Mater. 2021, 2, 105–115. https://doi.org/10.3390/electronicmat2020009.
Pereira, M.; Deuermeier, J.; Nogueira, R.; Carvalho, P. A.; Martins, R.; Fortunato, E.; Kiazadeh, A. Noble-Metal-Free Memristive Devices Based on IGZO for Neuromorphic Applications. Adv. Electron. Mater. 2020, 6, 2000242. https://doi.org/10.1002/aelm.202000242.
Tiwari, B.; Bahubalindruni, P. G.; Santos, A.; Santa, A.; Figueiredo, C.; Pereira, M.; Martins, R.; Fortunato, E.; Barquinha, P. Low-Voltage High-Speed Ring Oscillator with a-InGaZnO TFTs. IEEE J. Electron Devices Soc. 2020, 8, 584–588. https://doi.org/10.1109/JEDS.2020.2997101.
Bahubalindruni, P. G.; Barquinha, P.; Tiwari, B.; Pereira, M.; Santa, A.; Martins, J.; Rovisco, A.; Tavares, V.; Martins, R.; Fortunato, E. Rail-to-Rail Timing Signals Generation Using InGaZnO TFTs for Flexible X-Ray Detector. IEEE J. Electron Devices Soc. 2020, 8, 157–162. https://doi.org/10.1109/JEDS.2020.2971277.
Casa Branca, N.; Deuermeier, J.; Martins, J.; Carlos, E.; Pereira, M.; Martins, R.; Fortunato, E.; Kiazadeh, A. 2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes. Adv. Electron. Mater. 2020, 6, 1900958. https://doi.org/10.1002/aelm.201900958.
Moreira, M.; Carlos, E.; Dias, C.; Deuermeier, J.; Pereira, M.; Barquinha, P.; Branquinho, R.; Martins, R.; Fortunato, E. Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors. Nanomaterials 2019, 9, 1273. https://doi.org/10.3390/nano9091273.
