Jorge de Souto Martins

Research Assistant
Materials for Electronics, Optoelectronics and Nanotechnologies
2.21 1.03


Jorge de Souto Martins completed his PhD in Nanotechnologies and Nanosciences in 2021/02/24 by Universidade Nova de Lisboa, Department of Materials Science, CENIMAT/i3N, and the Integrated Master in Physics Engineering in 2012/12 by Universidade Nova de Lisboa, Deparment of Physics. He published 16 articles in peer-reviewed international journals (h-index=9, >200citations, as March 2021), 1 book chapter and 3 conference papers, being first author of 3, and corresponding author of 1. To date participated and/or participates as Post-doc in 3 project(s) and Researcher in 7 project(s). He has more than 40 communications in national and international conferences and seminars, several of them in the most prestigious conferences. The main topic of his research is the improvement of oxide TFT technologies by TCAD simulation tools.


Main scientific interests

Oxide thin film transistors, flexible and transparent electronics, TCAD simulation, Circuit design and characterization.


Silva, Carlos; Martins, Jorge; Deuermeier, Jonas; Pereira, Maria Elias; Rovisco, Ana; Barquinha, Pedro; Goes, João; et al. "Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxide". Electronic Materials 2 2 (2021): 105-115. 

Martins, Jorge; Kiazadeh, Asal; Pinto, Joana V.; Rovisco, Ana; Gonçalves, Tiago; Deuermeier, Jonas; Alves, Eduardo; et al. "Ta2O5/SiO2 Multicomponent Dielectrics for Amorphous Oxide TFTs". Electronic Materials 2 1 (2020): 1-16.

Pydi Ganga Bahubalindruni; Jorge Martins; Ana Santa; Vitor Tavares; Rodrigo Martins; Elvira Fortunato; Pedro Barquinha. "High-Gain Transimpedance Amplifier for Flexible Radiation Dosimetry Using InGaZnO TFTs". IEEE Journal of the Electron Devices Society 6 (2018): 760-765. 

Asal Kiazadeh; Henrique L. Gomes; Pedro Barquinha; Jorge Martins; Ana Rovisco; Joana V. Pinto; Rodrigo Martins; Elvira Fortunato. "Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors". Applied Physics Letters 109 5 (2016): 051606-051606. 

Jorge Martins, Pedro Barquinha, João Goes: TCAD Simulation of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors. Doctoral Conference on Computing, Electrical and Industrial Systems; 04/2016