Jonas Deuermeier

Assistant Researcher
Materials for Electronics, Optoelectronics and Nanotechnologies
2.2.20 1.3B - XPS lab


Jonas Deuermeier has more than 15 years of experience with interface properties of semiconductors and with in situ X-ray photoelectron spectroscopy and is responsible for the XPS activity of I3N/CENIMAT. Since 2017, he has been focusing on the correlation between electrical and material properties of oxide memristors as well as solving open questions in micro and nanoelectronics fabrication. During this time, he was appointed PI of the FCT project Supreme-IT: Sustainable Printed Memristors by Interface Tuning (Ref: EXPL/CTM-REF/0978/2021. In the EU project TERRAMETA (HORIZON-JU-SNS-2022-STREAM-B-01-02), he is currently coordinating the fabrication of MoS2 switches by traditional cleanroom-based photolithography. Student supervision has resulted in 10 concluded Master and 4 ongoing PhD thesis.


Academic Profile

(2011-2016) Joint-PhD in Material Engineering fromTechnical University Darmstadt, Germany and in Nanotechnology and Nanoscience from Universidade NOVA de Lisboa. He was ranked 1 st in the panel Material Science for FCT doctoral grants in 2011 (Ref: SFRH/BD/77103/2011).


Main scientific interests

Applied knowledge, mainly related to materials surfaces and interfaces (Nanofabrication and Characterization of Nanostructures, Nanofabrication and Characterization of Biomaterials);

Physical properties of materials, Instrumentation techniques;

Advanced experimental characterization techniques mainly for semiconductor diodes and memristor devices to establish charge conduction mechanism models.


R. A. Martins, E. Carlos, A. Kiazadeh, R. Martins, and J. Deuermeier, “Low-Temperature Solution-Based Molybdenum Oxide Memristors,” ACS Applied Engineering Materials, vol. 2, no. 2, pp. 298–304, Feb. 2024, doi:10.1021/acsaenm.3c00535.

P. Wendel, D. Dietz, J. Deuermeier, and A. Klein, “Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes,” Materials, vol. 14, no. 10, p. 2678, May 2021, doi:10.3390/ma14102678

N. Casa Branca, J. Deuermeier, J. Martins, E. Carlos, M. Pereira, R. Martins, E. Fortunato, & A. Kiazadeh, “2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes,” Advanced Electronic Materials, vol. 6, no. 2, pp. 1900958, 2020, doi:10.1002/aelm.201900958

J. Deuermeier, A. Kiazadeh, A. Klein, R. Martins, and E. Fortunato, Nanomaterials, vol. 9, no. 2, p. 289, 2019, doi: 10.3390/nano9020289.

J. Deuermeier, J. Gassmann, J. Brötz, and A. Klein, “Reactive magnetron sputtering of Cu2O: Dependence on oxygen pressure and interface formation with indium tin oxide,” J Appl Phys, vol. 109, no. 11, p. 113704, 2011, doi:10.1063/1.3592981.