Jonas Deuermeier

Materials for Electronics, Optoelectronics and Nanotechnologies
Assistant Researcher
2.22 13748
Lab. Caracterização Elétrica/XPS 13752


Postdoctoral researcher at i3N/CENIMAT, instrument responsible for X-ray and ultraviolet photoelectron spectroscopy.
Dual PhD degree in Nanotechnology and Nanosciences from Universidade Nova de Lisboa, Portugal and in Materials Engineering from Technische Universität Darmstadt, Germany. Engineering degree in Materials Science from Technische Universität Darmstadt.

His current research activity is focused on oxide semiconductors and their application in resistive switching devices. During his PhD, he worked on copper oxide for application in p-type thin-film transistors.

Main publications

J. Rosa, A. Kiazadeh, L. Santos, J. Deuermeier, R. Martins, H.L. Gomes, and E. Fortunato, "Memristors Using Solution-Based IGZO Nanoparticles", ACS Omega 2, 8366 (2017).

J. Deuermeier, E. Fortunato, R. Martins, and A. Klein, "Energy band alignment at the nanoscale", Applied Physics Letters 110, 51603 (2017).

J. Deuermeier, H.F. Wardenga, J. Morasch, S. Siol, S. Nandy, T. Calmeiro, A. Klein, and E. Fortunato, "Highly conductive grain boundaries in copper oxide thin films", Journal of Applied Physics 119, 235303 (2016).