Ana Isabel Bento Rovisco

Advanced Functional Materials for Micro and Nanotechnologies
Postdoctoral researcher
2.21 13743


Ana Rovisco received her PhD in Nanotechnology and Nanosciences in 2019 and her Master’s degree in Physics Engineering in 2012 from FCT-NOVA. She was also grant researcher at i3N/CENIMAT and CEMOP/UNINOVA where she worked with oxide thin film transistors/circuits (fabrication and characterization). The main topics of her research are now focused on the development of solution-based oxide semiconductor nanostructures for different applications, such as electronics, energy harvesting, photocatalysis and sensors, and their characterization, with special emphasis on electrical characterization using EBL and SEM (with nanomanipulators) tools.

Main scientific interests: Solution-based synthesis of oxide nanostructures; Nanolithography (EBL) and nanofabrication; Nanodevices; Flexible and transparent technology; Oxide thin film transistors.

Materials characterization techniques: XRD, SEM/EDS and electrical characterization of devices/circuits.

Main publications

A. Rovisco, R. Branquinho, J. Martins, M. J. Oliveira, D. Gomes, E. Fortunato, R. Martins and P. Barquinha, Seed-layer free zinc tin oxide tailored nanostructures for nanoelectronic applications: effect of chemical parameters, ACS Appl. Nano Mater., 1, 3986–97, 2018, DOI: 10.1021/acsanm.8b00743

A. Rovisco, R. Branquinho, J. Martins, E. Fortunato, R. Martins and P. Barquinha, Growth mechanism of seed-layer free ZnSnO3 nanowires: effect of physical parameters, Nanomaterials, 9(7), 1002, 2019, DOI: 10.3390/nano9071002

P.G. Bahubalindruni, A. Kiazadeh, A. Sacchetti, J. Martins, A. Rovisco, V.G. Tavares, R. Martins, E. Fortunato, P. Barquinha, Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance., J. Disp. Technol. 12, 515–518, 2016, DOI: 10.1109/JDT.2016.2550610  

A. Kiazadeh, H. L. Gomes, P. Barquinha, J. Martins, A. Rovisco, J. V. Pinto, R. Martins and E. Fortunato, Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors, Appl. Phys. Lett. 109, 051606, 2016, DOI: 10.1063/1.4960200

B. Barrocas, S. Sério, A. Rovisco, Y. Nunes, and M. E. M. Jorge, “Removal of rhodamine 6G dye contaminant by visible light driven immobilized Ca1-xLnxMnO3 (Ln=Sm, Ho; 0.1≤x≤0.4) photocatalysts,” Appl. Surf. Sci., Nov. 2015.