Alexandr Zamchiy

Assistant Researcher
Materials for Electronics, Optoelectronics and Nanotechnologies
DCM, Gab. 221 Nanophotonics & Energy Lab


Alexandr received his Bachelor and Master degrees in Physics in 2010 and 2012, respectively, from Novosibirsk State University, Novosibirsk Russia. He finished his PhD in 2015 for his work on the synthesis of silicon-containing structures by gas-jet electron beam plasma chemical vapor deposition method at Kutateladze Institute of Thermophysics SB RAS, Novosibirsk, Russia. As part of scientific internships supported by DAAD, Alexandr visited the Institute for Energy and Climate Research - Photovoltaics (IEK-5), Forschungszentrum Jülich GmbH, Germany, Silicon Heterojunction Materials and Solar Cells group (group leader - Dr. K. Ding) in 2015, 2017, and n2019. As part of these internships he took part in the research on the development, implementation and optimization of transparent passivating contact (SiO2/nc-SiC:H(n)) for the front side of crystalline silicon solar cells. In 2021, Alexandr did an internship in the Laboratory of Physics of Interfaces and Thin Films, Ecole Polytechnique, France under the supervision of prof. Pere Roca i Cabarrocas. The work was focused on the impact of annealing on the properties of doped epitaxial silicon layers grown by PECVD at low temperatures.


A.J. Olivares, A. Zamchiy, V.S. Nguyen, P. Roca i Cabarrocas, Boron activation in silicon thin films grown by PECVD under epitaxial and microcrystalline conditions, Applied Surface Science Advances, 18 (2023), 100508,


A.O. Zamchiy, Y.V. Vorobyov, N.A. Lunev, V.O. Konstantinov, S.Z. Sakhapov, E.A. Maximovskiy, E.A. Baranov, Kinetics of gold-induced layer exchange crystallization of amorphous silicon suboxide films: Experimental and theoretical study, Journal of Alloys and Compounds, 939 (2023) 168818,


A.O. Zamchiy, E.A. Baranov, Polycrystalline Silicon Thin Films for Solar Cells via Metal-Induced Layer Exchange Crystallization, Coatings, 12(12) (2022) 1926,