Sanjay Ram

Advanced Functional Materials for Micro and Nanotechnologies


Present: Post-Doctoral Researcher at CENIMAT since 2010.


Ph.D. in Physics (2006, Indian Institute of Technology Kanpur, India), (2006-2008) - Senior Project Scientist at IIT Kanpur, India. (2008-2009) - Postdoctoral researcher at LPICM, Ecole Polytechnique, France.

Main scientific interests:

Semiconductor Materials, especially silicon thin films, nanostructures and nanowires for large area electronic device applications; Development of high efficiency solar cells (Si thin film, c-Si, hybrid organic/inorganic); Thin film transistors: silicon based and OTFT, Dielectric materials for high definition plasma display panels,


“Young Scientist Award”, from the European Material Research Society in recognition of best Ph.D. thesis work, 2006, Nice, France.

“Best Poster Paper Award” from the Semiconductor Society of India and IEEE at IWPSD, 2001, India

Main publications

1. "Effect of ion energy on structural and electrical properties of intrinsic microcrystalline silicon layer deposited in matrix distributed electron cyclotron resonance plasma reactor”, Sanjay K. Ram, L. Kroely, P. Bulkin, P. Roca i Cabarrocas, Phys. Status Solidi A 207, 591 (2010).

2. “Evidence of Bimodal Crystallite Size Distribution in μc-Si:H Films”, Sanjay K. Ram, Md. N. Islam, S. Kumar and P. Roca i Cabarrocas, Materials Science and Engineering B 159-160 (2009).

3. “Model calculation of phototransport properties of minority carriers of fully crystalline undoped μc-Si:H”, Sanjay K. Ram, S. Kumar and P. Roca i Cabarrocas; Thin Solid Films 517 (2009).

4. “Influence of the statistical shift of Fermi level on the conductivity behavior in microcrystalline silicon”, Sanjay K. Ram, P. Roca i Cabarrocas and S. Kumar, Phys. Rev. B. 77, 045212 (2008).

5. "Structural, optical and secondary electron emission properties of diamond like carbon thin films deposited by pulsed-DC plasma CVD technique", D. K. Rai, Debjit Datta, Sanjay K. Ram, S. Sarkar, R. Gupta and S. Kumar, accepted in Solid State Sciences (2010).

6. “Band edge discontinuities and carrier transport in c-Si/Porous Silicon Heterojunctions”, Md. N. Islam, Sanjay K. Ram and S. Kumar, J. Phys. D: Appl. Phys. 40 (2007).

7. “Discharge characteristics of plasma display panels with Si doped MgO protective layers”, Sanjay K. Ram, U. K. Barik, S. Sarkar, P. Biswas, V. Singh, H. K. Dwivedi, and S. Kumar; Thin Solid Films 517 (2009).