<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Nunes, D.a</style></author><author><style face="normal" font="default" size="100%">Calmeiro, T.R.a</style></author><author><style face="normal" font="default" size="100%">Nandy, S.a</style></author><author><style face="normal" font="default" size="100%">Pinto, J.V.a</style></author><author><style face="normal" font="default" size="100%">Pimentel, A.a</style></author><author><style face="normal" font="default" size="100%">Barquinha, P.a</style></author><author><style face="normal" font="default" size="100%">Carvalho, P.A.b c</style></author><author><style face="normal" font="default" size="100%">Walmsley, J.C.d</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.a</style></author><author><style face="normal" font="default" size="100%">Martins, R.a</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Charging effects and surface potential variations of Cu-based nanowires</style></title><secondary-title><style face="normal" font="default" size="100%">Thin Solid Films</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Capacitive effect</style></keyword><keyword><style  face="normal" font="default" size="100%">Copper</style></keyword><keyword><style  face="normal" font="default" size="100%">Cu-based</style></keyword><keyword><style  face="normal" font="default" size="100%">Dielectric materials</style></keyword><keyword><style  face="normal" font="default" size="100%">Dielectric polarization</style></keyword><keyword><style  face="normal" font="default" size="100%">Electric force microscopy</style></keyword><keyword><style  face="normal" font="default" size="100%">Electron microscopy</style></keyword><keyword><style  face="normal" font="default" size="100%">Electrostatic devices</style></keyword><keyword><style  face="normal" font="default" size="100%">Electrostatic force</style></keyword><keyword><style  face="normal" font="default" size="100%">Electrostatic force microscopy</style></keyword><keyword><style  face="normal" font="default" size="100%">Electrostatics</style></keyword><keyword><style  face="normal" font="default" size="100%">Energy dispersive spectroscopy</style></keyword><keyword><style  face="normal" font="default" size="100%">Energy gap</style></keyword><keyword><style  face="normal" font="default" size="100%">High resolution transmission electron microscopy</style></keyword><keyword><style  face="normal" font="default" size="100%">Kelvin probe force microscopy</style></keyword><keyword><style  face="normal" font="default" size="100%">Microwave irradiation</style></keyword><keyword><style  face="normal" font="default" size="100%">Nanowires</style></keyword><keyword><style  face="normal" font="default" size="100%">Polarization</style></keyword><keyword><style  face="normal" font="default" size="100%">Probes</style></keyword><keyword><style  face="normal" font="default" size="100%">Scanning electron microscopy</style></keyword><keyword><style  face="normal" font="default" size="100%">Surface potential</style></keyword><keyword><style  face="normal" font="default" size="100%">Transmission electron microscopy</style></keyword><keyword><style  face="normal" font="default" size="100%">X ray diffraction</style></keyword><keyword><style  face="normal" font="default" size="100%">X ray spectroscopy</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84959511315&amp;doi=10.1016%2fj.tsf.2015.11.077&amp;partnerID=40&amp;md5=c6ed2d80027e6873c038793185f507f6</style></url></web-urls></urls><publisher><style face="normal" font="default" size="100%">Elsevier</style></publisher><volume><style face="normal" font="default" size="100%">601</style></volume><pages><style face="normal" font="default" size="100%">45-53</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">The present work reports charging effects and surface potential variations in pure copper, cuprous oxide and cupric oxide nanowires observed by electrostatic force microscopy (EFM) and Kelvin probe force microscopy (KPFM). The copper nanowires were produced by wet synthesis, oxidation into cuprous oxide nanowires was achieved through microwave irradiation and cupric oxide nanowires were obtained via furnace annealing in atmospheric conditions. Structural characterization of the nanowires was carried out by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. During the EFM experiments the electrostatic field of the positive probe charged negatively the Cu-based nanowires, which in turn polarized the SiO2 dielectric substrate. Both the probe/nanowire capacitance as well as the substrate polarization increased with the applied bias. Cu2O and CuO nanowires behaved distinctively during the EFM measurements in accordance with their band gap energies. The work functions (WF) of the Cu-based nanowires, obtained by KPFM measurements, yielded WFCuO &amp;gt; WFCu &amp;gt; WFCu2O. © 2015 Elsevier B.V.</style></abstract><notes><style face="normal" font="default" size="100%">cited By 0</style></notes></record></records></xml>