<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Liu, A.a b c</style></author><author><style face="normal" font="default" size="100%">Liu, G.a b c</style></author><author><style face="normal" font="default" size="100%">Zhu, C.a b c</style></author><author><style face="normal" font="default" size="100%">Zhu, H.a b c</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.d</style></author><author><style face="normal" font="default" size="100%">Martins, R.d</style></author><author><style face="normal" font="default" size="100%">Shan, F.a b c</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Solution-Processed Alkaline Lithium Oxide Dielectrics for Applications in n- and p-Type Thin-Film Transistors</style></title><secondary-title><style face="normal" font="default" size="100%">Advanced Electronic Materials</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84978872985&amp;doi=10.1002%2faelm.201600140&amp;partnerID=40&amp;md5=c32cf2462ad184580ffe838b9b2c9f43</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">9</style></number><publisher><style face="normal" font="default" size="100%">Blackwell Publishing Ltd</style></publisher><volume><style face="normal" font="default" size="100%">2</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">High-k alkaline lithium oxide (LiOx) thin films are fabricated by spin-coating method. The LiOx thin films are annealed at different temperatures and characterized by various techniques. An optimized LiOx dielectric is achieved at an annealing temperature of 300 °C and exhibits wide bandgap of ≈5.5 eV, smooth surface, relatively permittivity of ≈6.7, and low leakage current density. The as-fabricated LiOx thin films are integrated, as gate dielectrics, in both n-channel indium oxide (In2O3) and p-channel cupric oxide (CuO) transistors. The optimized In2O3/LiOx thin-film transistor (TFT) exhibits high performance and high stability, such as Ion/Ioff of 107, electron mobility of 5.69 cm2 V−1 s−1, subthreshold swing of 70 mV dec−1, negligible hysteresis, and threshold voltage shift of 0.1 V under bias stress for 1.5 h. Meanwhile, the p-channel CuO TFT based on LiOx dielectric shows high Ion/Ioff of 105 and hole mobility of 1.72 cm2 V−1 s−1. All the electrical performances are achieved at an ultra-low operating voltage of 2 V. Considering the simple procedure, the moderate annealing temperature, and the low power consumption merits, these outstanding characteristics represent a significant advance toward the development of battery compatible and portable electronics. © 2016 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim</style></abstract><notes><style face="normal" font="default" size="100%">cited By 0</style></notes></record></records></xml>