%0 Journal Article %J Advanced Electronic Materials %D 2016 %T Solution-Processed Alkaline Lithium Oxide Dielectrics for Applications in n- and p-Type Thin-Film Transistors %A Liu, A.a b c %A Liu, G.a b c %A Zhu, C.a b c %A Zhu, H.a b c %A Fortunato, E.d %A Martins, R.d %A Shan, F.a b c %I Blackwell Publishing Ltd %R 10.1002/aelm.201600140 %U https://www.scopus.com/inward/record.uri?eid=2-s2.0-84978872985&doi=10.1002%2faelm.201600140&partnerID=40&md5=c32cf2462ad184580ffe838b9b2c9f43 %V 2 %X High-k alkaline lithium oxide (LiOx) thin films are fabricated by spin-coating method. The LiOx thin films are annealed at different temperatures and characterized by various techniques. An optimized LiOx dielectric is achieved at an annealing temperature of 300 °C and exhibits wide bandgap of ≈5.5 eV, smooth surface, relatively permittivity of ≈6.7, and low leakage current density. The as-fabricated LiOx thin films are integrated, as gate dielectrics, in both n-channel indium oxide (In2O3) and p-channel cupric oxide (CuO) transistors. The optimized In2O3/LiOx thin-film transistor (TFT) exhibits high performance and high stability, such as Ion/Ioff of 107, electron mobility of 5.69 cm2 V−1 s−1, subthreshold swing of 70 mV dec−1, negligible hysteresis, and threshold voltage shift of 0.1 V under bias stress for 1.5 h. Meanwhile, the p-channel CuO TFT based on LiOx dielectric shows high Ion/Ioff of 105 and hole mobility of 1.72 cm2 V−1 s−1. All the electrical performances are achieved at an ultra-low operating voltage of 2 V. Considering the simple procedure, the moderate annealing temperature, and the low power consumption merits, these outstanding characteristics represent a significant advance toward the development of battery compatible and portable electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim %Z cited By 0